Search

Pages

1. • Journal article

   • 

   Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation

   Alvarado Pulido, José Joaquin[UCL] Iniguez, Benjamin Estrada, Magali Flandre, Denis[UCL] Cerdeira, Antonio (2009) International Journal of Numerical Modelling: Electronic Netwoks, Devices and Fields — Vol. 23, p. 88-106 (2009)
2. • Journal article

   • 

   A self-tuning inductive powering system for biomedical implants

   Carta, R. Thoné, J. Gosset, Geoffroy[UCL] Cogels, G. Flandre, Denis[UCL] Puers, R. (2011) Procedia Engineering — Vol. 25, p. 1585-1588 (31/12/2011)
3. • Journal article

   • 

   Review on double-gate MOSFETs and FinFETs modeling

   Cerdeira, Antonio Estrada, Magali Alvarado Pulido, José Joaquin Garduno, I. Contreras, E. Tinoco, J. Iniguez, Benjamin Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2013) Facta Universitatis. Series Electronics and Energetics — Vol. 26, no. 3, p. 197-213 (December 2013)
4. • Journal article

   • 

   Fully depleted SOI-CMOS technology for high temperature IC applications

   Gentinne, B.[UCL] Eggermont, Jean-Pierre[UCL] Flandre, Denis[UCL] Colinge, Jean-Pierre[UCL] (1997) Materials Science and Engineering B: Solid-State Materials for Advanced Technology — Vol. 46, no. 1-3, p. 1-7 (1997)
5. • Journal article

   • 

   Quantum Efficiency Improvement of SOI PIN Lateral Diodes Operating as UV Detectors at High Temperatures

   Novo, C. Bühler, R. Giacomini, R. Afzalian, Aryan[UCL] Flandre, Denis[UCL] (2017) IEEE Sensors Journal — Vol. PP, no.99, p. 8 (04/01/2017)
6. • Journal article

   • 

   A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation

   de Souza, Michelly Flandre, Denis[UCL] Pavanello, MA Iniguez, B. (2005) Solid-State Electronics — Vol. 49, no. 10, p. 1683-1692 (2005)
7. • Journal article

   • 

   Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors

   Assalti, Rafael Martins d'Oliveira, Ligia Pavanello, Marcelo Antonio Flandre, Denis[UCL] de Souza, Michelly (2016) IET Circuits, Devices and Systems — , p. 1-7 (11/12/2015)
8. • Journal article

   • 

   An analytical 3D model for short-channel effects in undoped FinFETs

   El Hamid, Hamdy Abd Iniguez, Benjamin Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Ismail, Yehea (2015) Journal of Computational Electronics — Vol. 14, no.2, p. 500-505 (02/2015)
9. • Journal article

   • 

   Subthreshold Slope of Long-channel, Accumulation-mode P-channel Soi Mosfets

   Colinge, Jean-Pierre[UCL] Flandre, Denis[UCL] Vandewiele, Fernand[UCL] (1994) Solid-State Electronics — Vol. 37, no. 2, p. 289-294 (1994)
10. • Journal article

    • 

    Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation

    Novo, Carla Baptista, Joao Guazzeli da Silveira, Marcilei Giacomini, Renato Afzalian, Aryan Flandre, Denis[UCL] (2015) ECS transactions — Vol. 66, no.5, p. 101-107 (2015)
11. • Journal article

    • 

    Integral function method for determination of nonlinear harmonic distortion

    Cerdeira, Antonio Flandre, Denis[UCL] Aleman, Miguel Estrada, Magali (2004) Solid-State Electronics — Vol. 48, no. 12, p. 2225-2234 (2004)
12. • Journal article

    • 

    A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling

    Rudenko, Tamara Nazarov, Alexei Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2015) Solid-State Electronics — Vol. 117, p. 66-76 (28/11/2015)
13. • Journal article

    • 

    Specific features of multiple-gate MOSFET threshold voltage and subthreshold slope behavior at high temperatures

    Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Collaert, Nadine Jurczak, Malgorzata (2007) Solid-State Electronics — Vol. 51, no. 9, p. 1185-1193 (2007)
14. • Journal article

    • 

    Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

    Qaderi, Fatemeh Rosca, Teodor Burla, Maurizio Leuthold, Juerg Flandre, Denis[UCL] Ionescu, Adrian M. (2023) Communications Materials — , no.34 (2023)
15. • Patent

    • 

    Strain sensor

    Roisin, Nicolas[UCL] Flandre, Denis[UCL] André, Nicolas[UCL] Delhaye, Thibault (2023)
16. • Journal article

    • 

    Reduction of gate-to-channel tunneling current in FinFET structures

    Rudenko, Tamara Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] Collaert, Nadine Jurczak, Malgorzata Nazarov, Alexei (2007) Solid-State Electronics — Vol. 51, no. 11-12, p. 1466-1472 (2007)
17. • Patent

    • 

    ULP basic blocks and their uses

    Levacq, David[UCL] Dessard, Vincent[UCL] Adriaensen, Stéphane[UCL] Flandre, Denis[UCL] (2005)
18. • Journal article

    • 

    Printed-Board Inductive Loop Topologies Performance for Partial Discharges Detection

    Flandre, Denis[UCL] Tounsi, Fares[UCL] (2024) IEEE Xplore digital library (IEEE/IET Electronic Library) — (2024)
19. • Journal article

    • 

    Comparative study of the interface passivation properties of LiF & Al2O3 using silicon MIS capacitor

    Parion, Jonathan Scaffidi, Romain[UCL] Duerinckx, Filip Sivaramakrishnan, Hariharsudan Flandre, Denis[UCL] Poortmans, Jef Vermang, Bart (2024) Applied Physics Letters — Vol. 124, no.14, p. 142901 (2024)
20. • Journal article

    • 

    The Influence of Back Gate Bias on the OCTO SOI MOSFET's Response to X-ray Radiation

    N. de S. Fino, Leonardo A. G. Silveira, Marcilei Renaux, Christian[UCL] Flandre, Denis[UCL] Pinillos Gimenez, Salvador (2015) Journal of Integrated Circuits and Systems — Vol. 10, no.1, p. 43-48 (2015)
21. • Journal article

    • 

    Ultimate Limit in Optoelectronic Performances of Monolayer WSe2 Sloping-Channel Transistors

    Xie, Zhengdao Li, Guoli[UCL] Xia, Shengxuan Liu, Chang[UCL] Zhang, Sen Flandre, Denis[UCL] (2023) Nano Letters : a journal dedicated to nanoscience and nanotechnology — Vol. 23, p. 6664-6672 (2023)
22. • Journal article

    • 

    Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection

    Afzalian, Aryan Flandre, Denis[UCL] (2023) Sensors — Vol. 23, no.12, p. 5405 (2023)
23. • Journal article

    • 

    Power-delay product minimization in high-performance 64-bit carry-select adders

    Neve, Amaury[UCL] Schettler, Helmut Ludwig, Thomas Flandre, Denis[UCL] (2004) IEEE Transactions on Very Large Scale Integration (VLSI) Systems — Vol. 12, no. 3, p. 235-244 (2004)
24. • Journal article

    • 

    Electrical Evolution of p-Type SnO Film and Transistor Deposited by RF Magnetron Sputtering

    Zhou, Yuyan Song, Yu Hong, Ruohao Liu, Xingqiang Zou, Xuming Iniguez, Benjamin Flandre, Denis[UCL] Li, Guoli[UCL] Liao, Lei (2023) IEEE Transactions on Electron Devices — Vol. 70, no.6, p. 3100-3105 (2023)
25. • Journal article

    • 

    Analysis of trap distribution and NBTI degradation in Al2O3/SiO2 dielectric stack

    Yan, Yiyi[UCL] Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2023) Solid State Electronics — Vol. 207, no.207 (2023)

Pages