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Displaying 6 results.
    • Journal article
    A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation
    de Souza, Michelly Flandre, Denis[UCL] Pavanello, MA Iniguez, B. (2005) Solid-State Electronics — Vol. 49, no. 10, p. 1683-1692 (2005)
    • Journal article
    Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications
    Pavanello, MA Flandre, Denis[UCL] Der Agopian, PG Martino, JA (2006) Microelectronics — Vol. 37, no. 2, p. 137-144 (2006)
    • Journal article
    Low temperature operation of graded-channel SOI nMOSFETs for analog applications
    Pavanello, MA Der Agopian, PG Martino, JA Flandre, Denis[UCL] (2002) Journal de Physique IV — Vol. 12, no. 3, p. 23-26 (2002)
    • Journal article
    Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature
    Pavanello, MA Martino, JA Colinge, JP. (1997) Solid-State Electronics — Vol. 41, no. 9, p. 1241-1246 (1997)
    • Journal article
    Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
    Gimenez, SP Flandre, Denis[UCL] Pavanello, MA Martino, JA (2006) Microelectronics Journal — Vol. 37, no. 1, p. 31-37 (2006)
    • Journal article
    Substrate influences on fully depleted enhancement mode SOI MOSFETs at room temperature and at 77 K
    Pavanello, MA Martino, JA Colinge, JP. (1997) Solid-State Electronics — Vol. 41, no. 1, p. 111-119 (1997)