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Displaying 1 - 25 of 144 results.

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    • Speech
    Device characteristics of Trigate-FET with barrier constrictions in the channel
    Dehdashti Akhavan, Nima Afzalian, Aryan[UCL] Lee, Chi-Woo Yan, Ran Fagas, Giorgos Colinge, Jean-Pierre (2009) 13th International Workshop on Computational Electronics (IWCE 2009) — Beijing (China)
    • Speech
    An SOI nano flash memory device
    Tang, Xiaohui[UCL] Baie, Xavier[UCL] Bayot, Vincent[UCL] Van de Wiele, Fernand[UCL] Colinge, Jean-Pierre (1999) IEEE International SOI Conference 1999 — Rohnert Park, CA (USA)
    • Journal article
    Junctionless multigate field-effect transistor
    Lee, Chi-Woo Afzalian, Aryan[UCL] Dehdashti-Akhavan, Nima Yan, Ran ferain, Isabelle Colinge, Jean-Pierre (2009) Applied Physics Letters — Vol. 94, p. 053511-1 - 2 (February 2009)
    • Speech
    3D simulation and measurement of very narrow AM and IM triple-gate MOSFETs
    Yan, Ran Afzalian, Aryan[UCL] Lee, Chi-Woo Dehdashti Akhavan, Nima Xiong, Weize Colinge, Jean-Pierre (2008) 2008 China-Ireland International Conference on Information and Communication Technologies (CIICT 2008) — Beijing (China)
    • Journal article
    Hall effect measurements in double-gate SOI MOSFETs
    Vandooren, Anne Flandre, Denis[UCL] Cristoloveanu, Sorin Colinge, Jean-Pierre[UCL] (2001) Solid-State Electronics — Vol. 45, no. 10, p. 1793-1798 (2001)
    • Journal article
    Properties of Accumulation-Mode Multi-Gate Field-Effect Transistors
    Colinge, Jean-Pierre Lederer, Dimitri Afzalian, Aryan[UCL] Yan, Ran Lee, Chi-Woo Dehdashti Akhavan, Nima Xiong, Weize (2009) Japanese Journal of Applied Physics — Vol. 48, p. 034502 (7 pages) (March 2009)
    • Journal article
    Subthreshold Slope of Long-channel, Accumulation-mode P-channel Soi Mosfets
    Colinge, Jean-Pierre[UCL] Flandre, Denis[UCL] Vandewiele, Fernand[UCL] (1994) Solid-State Electronics — Vol. 37, no. 2, p. 289-294 (1994)
    • Journal article
    Fully depleted SOI-CMOS technology for high temperature IC applications
    Gentinne, B.[UCL] Eggermont, Jean-Pierre[UCL] Flandre, Denis[UCL] Colinge, Jean-Pierre[UCL] (1997) Materials Science and Engineering B: Solid-State Materials for Advanced Technology — Vol. 46, no. 1-3, p. 1-7 (1997)
    • Speech
    SOI Devices
    Colinge, Jean-Pierre[UCL] Flandre, Denis[UCL] (2008) IEEE International SOI conference: SOI Fundamentals Class — New Paltz, New York (USA)
    • Journal article
    Drain breakdown Voltage in MuGFETs: Influence of Physical Parameters
    Lee, Chi-Woo Afzalian, Aryan[UCL] Yan, Ran Dehdasti Akhavan, Nima Xiong, Weize Colinge, Jean-Pierre (2008) IEEE Transactions on Electron Devices — Vol. 55, no.12, p. 3503-3506 (November 2008)
    • Speech
    Physical analysis of the high-temperature subthreshold slope in SOI MOSFETs
    Rudenko, Tamara Kilchytska, Valeriya[UCL] Colinge, Jean-Pierre[UCL] Flandre, Denis[UCL] (2000) 2000 IEEE International SOI Conference — Wakefield, MA (USA)
    • Speech
    High-temperature SOI technology
    Flandre, Denis[UCL] Colinge, Jean-Pierre[UCL] (1994) IX Brazilian Microelectronics Society Congress — Rio de janeiro (Brazil)
    • Speech
    High-temperature performances of a SOI CMOS gain-boosting OTA
    Gentinne, Bernard[UCL] Flandre, Denis[UCL] Eggermont, Jean-Pierre[UCL] Colinge, Jean-Pierre[UCL] (1996) Third International High Temperature Conference — Albuquerque (USA)
    • Speech
    Performance of double-gate SOI NMOSFETs at low temperature
    Vandooren, Anne[UCL] Cristoloveanu, Sorin Colinge, Jean-Pierre[UCL] Flandre, Denis[UCL] (2001) 2001 Electrochemical Society Conference — Washington DC (USA)

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