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    • BookChapter
    Characterization of Carrier Generation in Thin-Film SOI Devices By Reverse Gated-Diode Technique and Its Application At High Temperatures
    Rudenko, Tamara Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2005) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Kiev, Ukraine 26–30 April 2004 — [ISBN : 1-4020-3011-8]
    • Journal article
    Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
    Rudenko, Tamara Nazarov, Alexei Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Popov, V. Ilnitsky, M. Lysenko, V. (2013) Semiconductor Physics, Quantum Electronics & Optoelectronics — Vol. 16, no.3, p. 300-309 (30/09/2013)
    • Journal article
    A physically-based C-infinity-continuous fully-depleted SOI MOSFET model for analog applications
    Iniguez, B. Ferreira, LF Gentinne, B. Flandre, Denis[UCL] (1996) IEEE Transactions on Electron Devices — Vol. 43, no. 4, p. 568-575 (1996)
    • Journal article
    Effects of high-energy neutrons on advanced SOI MOSFETs
    Kilchytska, Valeriya[UCL] Alvarado, Joaquin[UCL] Militaru, Otilia[UCL] Berger, Guy[UCL] Flandre, Denis[UCL] (2011) Advanced Materials Research — Vol. 276, no. 276.95, p. 95-105 (09/06/2011)
    • Journal article
    Comparison of Soi Versus Bulk Performance of Cmos Micropower Single-stage Otas
    Flandre, Denis[UCL] Jespers, Paul[UCL] Eggermont, JP. Deceuster, D. (1994) Electronics Letters — Vol. 30, no. 23, p. 1933-1934 (1994)
    • Journal article
    Monolithically integrated 10 Gbit/s photodiode and transimpedance amplifier in thin-film SOICMOS technology
    Afzalian, Aryan[UCL] Flandre, Denis[UCL] (2006) Electronics Letters — Vol. 42, no. 24, p. 1420-1421 (2006)
    • Journal article
    High-temperature applications of SIMOX technology
    Auberton-Hervé, A.J. Colinge, Jean-Pierre[UCL] Flandre, Denis[UCL] (1995) HITEN News — , no.5 (03/1995)
    • Journal article
    25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process
    Adriaensen, Stéphane[UCL] Flandre, Denis[UCL] Dessard, Vincent[UCL] (2002) Electronics Letters — Vol. 38, no. 19, p. 1103-1104 (2002)
    • Journal article
    High-temperature sigma-delta modulator in thin-film fully-depleted SOI technology
    Viviani, A.[UCL] Jespers, Paul[UCL] Flandre, Denis[UCL] (1999) Electronics Letters — Vol. 35, no. 9, p. 749-751 (1999)
    • BookChapter
    Part 1: Design of low-voltage low-power CMOS analog building blocks and OTAs using EKV modelling and gm/ID methodology in bulk and SOI technologies
    Flandre, Denis[UCL] (2000) Low power techniques and neural applications in microelectronics — [ISBN : 84-922529-6-0]
    • BookChapter
    Introduction to part 3, in Nanoscale CMOS
    Balestra, Francis Flandre, Denis[UCL] (2013) Nanoscale CMOS. Innovative Materials, Modeling and Characterization — [ISBN : 978-1-8482-1180-3]
    • Journal article
    Total-dose effects in double-gate-controlled NPN bipolar transistors
    Vandooren, Anne Yuan, Jang-Gn Flandre, Denis[UCL] Colinge, Jean-Pierre[UCL] (2001) IEEE Transactions on Nuclear Science — Vol. 48, no.5, p. 1694-1699 (2011)
    • Journal article
    Comments on ''Numerical analysis of small-signal characteristics of a fully depleted SOI MOSFET
    Flandre, Denis[UCL] (1994) Solid-State Electronics — Vol. 37, no. 7, p. 1447-1448 (1994)
    • Journal article
    Characterization and modelling of single event transients in LDMOS-SOI FETs
    Alvarado, Jose Joaquin[UCL] Kilchytska, Valeriya[UCL] Boufouss, El Hafed[UCL] Flandre, Denis[UCL] (2011) Microelectronics Reliability — Vol. 51, no. 9-11, p. 2004–2009 (Septembre–Novembre 2011)
    • Journal article
    Fully integrated blue/UV SOI CMOS photosensor for biomedical and environmental applications
    Bulteel, Olivier[UCL] Afzalian, Aryan[UCL] Flandre, Denis[UCL] (2010) Analog Integrated Circuits and Signal Processing — Vol. 65, no. 3, p. 399-405 (2010)

Pages