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1. • BookChapter

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   Characterization of Carrier Generation in Thin-Film SOI Devices By Reverse Gated-Diode Technique and Its Application At High Temperatures

   Rudenko, Tamara Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2005) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Kiev, Ukraine 26–30 April 2004 — [ISBN : 1-4020-3011-8]
2. • Journal article

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   The Influence of Back Gate Bias on the OCTO SOI MOSFET's Response to X-ray Radiation

   N. de S. Fino, Leonardo A. G. Silveira, Marcilei Renaux, Christian[UCL] Flandre, Denis[UCL] Pinillos Gimenez, Salvador (2015) Journal of Integrated Circuits and Systems — Vol. 10, no.1, p. 43-48 (2015)
3. • Journal article

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   Modeling of Thin-Film Lateral SOI PIN Diodes with an Alternative Multi-Branch Explicit Current Model

   Lugo-Muñoz Muci, J. Ortiz-Conde, A. García-Sánchez, F.J. de Souza, Michelly Flandre, Denis[UCL] Pavanello, Marcelo Antonio (2012) Journal of Integrated Circuits and Systems — Vol. 7, no. 1, p. 92-99 (2012)
4. • Patent

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   Double-gate floating-body memory device

   Bawedin, Maryline[UCL] Cristoloveanu, Sorin Ioan Flandre, Denis[UCL] Renaux, Christian[UCL] Crahay, André[UCL] (2013)
5. • Journal article

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   Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs

   Rudenko, Tamara Nazarov, Alexei Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Popov, V. Ilnitsky, M. Lysenko, V. (2013) Semiconductor Physics, Quantum Electronics & Optoelectronics — Vol. 16, no.3, p. 300-309 (30/09/2013)
6. • Journal article

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   Frequency Variation of the Small-Signal Output Conductance of Decananometer MOSFETs Due to Substrate Crosstalk

   Kilchytska, Valeriya[UCL] Pailloncy, Guillaume[UCL] Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] Collaert, N. Jurczak, M. Flandre, Denis[UCL] (2007) IEEE ELECTRON DEVICE LETTERS — Vol. 28, no. 5, p. 419-421 (May 2007)
7. • Journal article

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   A physically-based C-infinity-continuous fully-depleted SOI MOSFET model for analog applications

   Iniguez, B. Ferreira, LF Gentinne, B. Flandre, Denis[UCL] (1996) IEEE Transactions on Electron Devices — Vol. 43, no. 4, p. 568-575 (1996)
8. • Journal article

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   Effects of high-energy neutrons on advanced SOI MOSFETs

   Kilchytska, Valeriya[UCL] Alvarado, Joaquin[UCL] Militaru, Otilia[UCL] Berger, Guy[UCL] Flandre, Denis[UCL] (2011) Advanced Materials Research — Vol. 276, no. 276.95, p. 95-105 (09/06/2011)
9. • Journal article

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   Comparison of Soi Versus Bulk Performance of Cmos Micropower Single-stage Otas

   Flandre, Denis[UCL] Jespers, Paul[UCL] Eggermont, JP. Deceuster, D. (1994) Electronics Letters — Vol. 30, no. 23, p. 1933-1934 (1994)
10. • Journal article

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    Monolithically integrated 10 Gbit/s photodiode and transimpedance amplifier in thin-film SOICMOS technology

    Afzalian, Aryan[UCL] Flandre, Denis[UCL] (2006) Electronics Letters — Vol. 42, no. 24, p. 1420-1421 (2006)
11. • Journal article

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    High-temperature applications of SIMOX technology

    Auberton-Hervé, A.J. Colinge, Jean-Pierre[UCL] Flandre, Denis[UCL] (1995) HITEN News — , no.5 (03/1995)
12. • Journal article

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    25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process

    Adriaensen, Stéphane[UCL] Flandre, Denis[UCL] Dessard, Vincent[UCL] (2002) Electronics Letters — Vol. 38, no. 19, p. 1103-1104 (2002)
13. • Journal article

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    High-temperature sigma-delta modulator in thin-film fully-depleted SOI technology

    Viviani, A.[UCL] Jespers, Paul[UCL] Flandre, Denis[UCL] (1999) Electronics Letters — Vol. 35, no. 9, p. 749-751 (1999)
14. • BookChapter

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    Part 1: Design of low-voltage low-power CMOS analog building blocks and OTAs using EKV modelling and gm/ID methodology in bulk and SOI technologies

    Flandre, Denis[UCL] (2000) Low power techniques and neural applications in microelectronics — [ISBN : 84-922529-6-0]
15. • BookChapter

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    Introduction to part 3, in Nanoscale CMOS

    Balestra, Francis Flandre, Denis[UCL] (2013) Nanoscale CMOS. Innovative Materials, Modeling and Characterization — [ISBN : 978-1-8482-1180-3]
16. • Journal article

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    Total-dose effects in double-gate-controlled NPN bipolar transistors

    Vandooren, Anne Yuan, Jang-Gn Flandre, Denis[UCL] Colinge, Jean-Pierre[UCL] (2001) IEEE Transactions on Nuclear Science — Vol. 48, no.5, p. 1694-1699 (2011)
17. • Journal article

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    Substrate bias effect linked to parasitic series resistance in multiple-gate SOI MOSFETs

    Rudenko, Tamara Kilchytska, Valeria[UCL] Collaert, Nadine Jurczak, Malgorzata Nazarov, Alexey Flandre, Denis[UCL] (2007) IEEE Electron Device Letters — Vol. 28, no. 9, p. 834-836 (2007)
18. • Journal article

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    Comments on ''Numerical analysis of small-signal characteristics of a fully depleted SOI MOSFET

    Flandre, Denis[UCL] (1994) Solid-State Electronics — Vol. 37, no. 7, p. 1447-1448 (1994)
19. • Journal article

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    Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications

    Bawedin, Maryline[UCL] Cristoloveanu, Sorin Flandre, Denis[UCL] (2010) Solid-State Electronics — Vol. 54, no. 2, p. 104-114 (2010)
20. • Journal article

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    Junctionless nanowire transistors operation at temperatures down to 4.2 K

    Trevisoli, Renan de Souza, Michelly Trevisoli Doria, Rodrigo Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Pavanello, Marcelo Antonio (2016) Semiconductor Science and Technology — Vol. 31, no.11, p. 114001 (16/10/2016)
21. • Journal article

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    Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs

    de Souza, Michelly Cardoso Paz, Bruna Flandre, Denis[UCL] Pavanello, Marcelo Antonio (2013) Microelectronics Reliability — p. 848-855 (06/04/2013)
22. • Journal article

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    Characterization and modelling of single event transients in LDMOS-SOI FETs

    Alvarado, Jose Joaquin[UCL] Kilchytska, Valeriya[UCL] Boufouss, El Hafed[UCL] Flandre, Denis[UCL] (2011) Microelectronics Reliability — Vol. 51, no. 9-11, p. 2004–2009 (Septembre–Novembre 2011)
23. • Journal article

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    The effect of series resistance on threshold voltage measurement techniques for fully depleted SOI MOSFETs

    Wainwright, SP Hall, S. Flandre, Denis[UCL] (1996) Solid-State Electronics — Vol. 39, no. 1, p. 89-94 (1996)
24. • Journal article

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    Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications

    Pavanello, MA Flandre, Denis[UCL] Der Agopian, PG Martino, JA (2006) Microelectronics — Vol. 37, no. 2, p. 137-144 (2006)
25. • Journal article

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    Fully integrated blue/UV SOI CMOS photosensor for biomedical and environmental applications

    Bulteel, Olivier[UCL] Afzalian, Aryan[UCL] Flandre, Denis[UCL] (2010) Analog Integrated Circuits and Signal Processing — Vol. 65, no. 3, p. 399-405 (2010)

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