This work studies the influence of gate misalignment on the electrical properties of Multigate Field-Effect Transistors (MuGFETs) using both measurements and 3D simulations. Electrical characteristics such as a DIBL, drain breakdown voltage and hot-carrier effects are shown to be dependent on the gate misalignment due to the resulting change in effective fin width. The performances of devices that have a widening of the fin at the drain side (DW) are degraded due to weakening of gate control. Widening of the fin at the source (SW), however, does not alter the device characteristics.
