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1. • Journal article

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   A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

   El Hamid, Hamdy Abd Guitart, Jaume Roig Kilchytska, Valeria Flandre, Denis[UCL] Iniguez, Benjamin (2007) IEEE Transactions on Electron Devices — Vol. 54, no. 9, p. 2487-2496 (2007)
2. • Journal article

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   Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors

   Li, Guoli Fan, Zizheng André, Nicolas[UCL] Xu, Yongye Xia, Ying Iniguez, Benjamin Liao, Lei Flandre, Denis[UCL] (2021) IEEE Electron Device Letters — Vol. 42, no.1, p. 94-97 (2021)
3. • Speech

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   Compact Modeling Techniques in Thin-Film SOI MOSFETs

   Iniguez, Benjamin Flandre, Denis[UCL] (2008) MOS Modeling and Parameter Extraction ESSDERC/ESSCIRC Workshop — Edinburgh (UK)
4. • Speech

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   C infinite - continuous AM SOI pMOSFET Model for High-Temperature Applications

   Houk, Youri Iniguez, Benjamin Flandre, Denis[UCL] Nazarov, Alexei (2005) First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2005) — Granada (Spain)
5. • Speech

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   Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures

   Bellodi, Marcello Iniguez, Benjamin[UCL] Flandre, Denis[UCL] Raynaud, C.[UCL] Martino, Joao Antonio (2000) International Conference on Microelectronics and Packaging — Manaus (Brésil)
6. • Journal article

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   Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation

   Alvarado Pulido, José Joaquin[UCL] Iniguez, Benjamin Estrada, Magali Flandre, Denis[UCL] Cerdeira, Antonio (2009) International Journal of Numerical Modelling: Electronic Netwoks, Devices and Fields — Vol. 23, p. 88-106 (2009)
7. • Journal article

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   Review on double-gate MOSFETs and FinFETs modeling

   Cerdeira, Antonio Estrada, Magali Alvarado Pulido, José Joaquin Garduno, I. Contreras, E. Tinoco, J. Iniguez, Benjamin Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2013) Facta Universitatis. Series Electronics and Energetics — Vol. 26, no. 3, p. 197-213 (December 2013)
8. • Journal article

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   C-infinity-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs

   Houk, Youri Iniguez, Benjamin Flandre, Denis[UCL] Nazarov, Alexei (2006) Solid-State Electronics — Vol. 50, no. 7-8, p. 1261-1268 (2006)
9. • Journal article

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   Electrical Evolution of p-Type SnO Film and Transistor Deposited by RF Magnetron Sputtering

   Zhou, Yuyan Song, Yu Hong, Ruohao Liu, Xingqiang Zou, Xuming Iniguez, Benjamin Flandre, Denis[UCL] Li, Guoli[UCL] Liao, Lei (2023) IEEE Transactions on Electron Devices — Vol. 70, no.6, p. 3100-3105 (2023)
10. • Speech

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    CAD-compatible model for accumulation-mode (AM) SOI pMOSFETs

    Iniguez, Benjamin Gentinne, Bernard[UCL] Dessard, Vincent[UCL] Flandre, Denis[UCL] (1997) IEEE International SOI Conference 1997 — Tenya Lodge (USA)
11. • Speech

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    Unified deep-submicron fully-depleted SOI MOSFET modeling for circuit simulation

    Iniguez, Benjamin Nève, Amaury[UCL] Flandre, Denis[UCL] Raynaud, C.[UCL] (1999) XIV Congreso de Diseño de Circuitos Integrados — Palma (Spain)
12. • Speech

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    A physically-based continuous analytical graded-channel SOI nMOSFET model for analog applications

    Pavanello, Marcelo Antonio Iniguez, Benjamin Martino, Joao Antonio Flandre, Denis[UCL] (2002) Fourth IEEE International Caracas Conference on Devices, Circuits and Systems — Aruba
13. • Speech

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    A physically-based continuous model for graded-channel SOI MOSFET

    Pavanello, Marcelo Antonio Iniguez, Benjamin Flandre, Denis[UCL] Martino, Joao Antonio (2002) XVII SBMicro Microelectronics Technology and Devices (ECS 2002) — Brazilia (Brazil)
14. • Speech

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    A simple leakage drain current model for accumulation-mode SOI nMOSFETs operating up to 300°C

    Bellodi, Marcello Iniguez, Benjamin[UCL] Flandre, Denis[UCL] Martino, J.A. (2001) XVI SBMicro, International Conference on Microelectronics and Packaging — Pousada dos Pireneus Resort Pirenopolis, State Goias (Brazil)
15. • Journal article

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    SOI n-MOSFET low-frequency noise measurements and modeling from room temperature up to 250 degrees C

    Dessard, Vincent[UCL] Flandre, Denis[UCL] Iniguez, Benjamin Adriaensen, Stéphane[UCL] (2002) IEEE Transactions on Electron Devices — Vol. 49, no. 7, p. 1289-1295 (2002)
16. • Speech

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    Potential of surface accumulation mode for deep-submicron fully-depleted SOI CMOS technologies

    Iniguez, Benjamin[UCL] Rauly, E.[UCL] Flandre, Denis[UCL] (2001) Tenth International Symposium on Silicon-on-Insulator Technology and Devices — Washington, DC (USA)
17. • Speech

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    Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C

    Bellodi, Marcello Iniguez, Benjamin[UCL] Flandre, Denis[UCL] Martino, Joao Antonio (2000) International Conference on Microelectronics and Packaging — Manaus (Brésil)
18. • Speech

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    Improvement of sub 0.25 µm fully-depleted SOI CMOS analog performance by thinning the Si film

    Nève de Mévergnies, Amaury[UCL] Dessard, Vincent[UCL] Delatte, Pierre[UCL] Brodeoux, V.[UCL] Iniguez, Benjamin[UCL] Rauly, E.[UCL] Flandre, Denis[UCL] (2001) Tenth International Symposium on Silicon-on-Insulator Technology and Devices — Washington, DC (USA)
19. • Speech

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    Direct MOSFET Parameters Extraction Using Fourier-Space Techniques

    Picos, R. Roca, M. Iniguez, Benjamin[UCL] Bellodi, M. Flandre, Denis[UCL] Garcia-Moreno, E. (2004) Fifth International Caracas Conference on Devices, Circuits and Systems — Dominican Republic
20. • Speech

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    Deep-submicron DC to RF SOI MOSFET characterization and modelling

    Iniguez, Benjamin Demeûs, Laurent[UCL] Nève, Amaury[UCL] Flandre, Denis[UCL] D'Hayer, S.[UCL] Simon, Pascal[UCL] Vanhoenacker-Janvier, Danielle[UCL] Raynaud, C.[UCL] (1999) 1999 International Semiconductor device research Symposium — Charlottesville (USA)
21. • Speech

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    A Fully Analytical Continuous Model for Graded-Channel SOI MOSFET for Analog Applications

    de Souza, Michelly Pavanello, M.A. Iniguez, Benjamin Flandre, Denis[UCL] (2004) 19th International Symposium on Microelectronics Technology and Devices (SBMICRO 2004) — Porto de Galinhas Beach (Brazil)
22. • Speech

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    Modelling of the leakage drain current in accumulation-mode SOI pMOSFETs for high-temperature applications

    Bellodi, M. Iniguez, Benjamin[UCL] Flandre, Denis[UCL] Martino, J.A. (2001) Tenth International Symposium on Silicon-on-Insulator Technology and Devices — Washington, DC (USA)
23. • Speech

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    Modeling of the AM SOI pMOSFETs

    Houk, Y. Iniguez, Benjamin Flandre, Denis[UCL] Nazarov, Alexei (2006) Eurosoi 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits — Grenoble (France)
24. • Speech

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    Analysis and future trends of Iddq testing for silicon on insulator CMOS ICs

    Iniguez, Benjamin[UCL] Raskin, Jean-Pierre[UCL] Simon, Pascal[UCL] Flandre, Denis[UCL] Segura, J.[UCL] (2001) 2001 IEEE International Workshop on Current and Defect Based Testing (DBI'2001) — Los Angeles (USA)
25. • Speech

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    Compact Model of Double-Gate MOSFETs for Low Power Analog Applications

    Moldovan, Oana Cerdeira, Antonio Jimenez, David Raskin, Jean-Pierre[UCL] Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Collaert, N. Iniguez, Benjamin (2006) XXI Conference on Design of Circuits and integrated Systems (DCIS 2006) — Barcelona/Spain

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