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Displaying 7 results.
    • Speech
    Impact of temperature reduction and channel engineering on the linearity of FD SOI nMOSFETs
    de Souza, Michelly Flandre, Denis[UCL] Martino, J.A. Simoen, Eddy Claeys, Cor Pavanello, Marcelo Antonio (2009) EUROSOI Conference 2009 — Göteborg (Sweden)
    • Journal article
    Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature
    Pavanello, M.A. de Souza, M. Ribeiro, T.A. Martino, J.A. Flandre, Denis[UCL] (2016) Semiconductor Science and Technology — Vol. 31, no.11, p. 114005 (20/10/2016)
    • Speech
    Modelling of the leakage drain current in accumulation-mode SOI pMOSFETs for high-temperature applications
    Bellodi, M. Iniguez, Benjamin[UCL] Flandre, Denis[UCL] Martino, J.A. (2001) Tenth International Symposium on Silicon-on-Insulator Technology and Devices — Washington, DC (USA)
    • Speech
    A simple leakage drain current model for accumulation-mode SOI nMOSFETs operating up to 300°C
    Bellodi, Marcello Iniguez, Benjamin[UCL] Flandre, Denis[UCL] Martino, J.A. (2001) XVI SBMicro, International Conference on Microelectronics and Packaging — Pousada dos Pireneus Resort Pirenopolis, State Goias (Brazil)
    • Journal article
    Analysis on the improved analog performance on double gate transistors by using the graded-channel architecture in a wide temperature range
    Pavanello, M.A. Martino, J.A. Raskin, Jean-Pierre[UCL] Flandre, Denis[UCL] (2005) Solid-State Electronics, Elsevier Science, Pergamon — Vol. 49, no. 10, p. 1569-1575 (October)
    • Journal article
    Low-frequency noise behaviour of graded-channel SOI nMOSFETs
    Simoen, E. Claeys, C. Chung, Tsung Ming[UCL] Flandre, Denis[UCL] Pavanello, M.A. Martino, J.A. Raskin, Jean-Pierre[UCL] (2006) Solid-State Electronics — Vol. 51, no. 2, p. 260-267 (2007)
    • Journal article
    Low-frequency noise behavior of graded-channel SOI n-MOSFETs
    Simoen, E. Claeys, C. Chung, Tsung Ming[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] Pavanello, M.A. Martino, J.A. (2007) Solid-State Electronics, Special issue — Vol. 51, no. 2, p. 260-267 (2007)