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1. • Journal article

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   The Shift of Breakdown Voltage for Silicon Membrane Strip Detectors Resulting from Surface Avalanche

   Wei, Peng Sabri Alirezaei, Iman[UCL] André, Nicolas[UCL] Zeng, Xi[UCL] Bouterfa, Mohamed[UCL] Wang, Bin Zeng, Yun[UCL] Flandre, Denis[UCL] (2021) Journal of Applied Physics — Vol. 129, no.21, p. 214501-1/7 (2021)
2. • Speech

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   Bottom-Up Life-Cycle Assessment of MEMS Piezoresistive Pressure Sensors

   Delhaye, Thibault[UCL] Le Brun, Grégoire[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2021) Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS — Virtual event
3. • Journal article

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   Theoretical-analysis of the 2-terminal Mos Capacitor On Soi Substrate

   Paelinck, Pierre[UCL] Flandre, Denis[UCL] Terao, Akira[UCL] Vandewiele, F.[UCL] (1988) Journal de Physique — Vol. 49, no. C-4, p. 67-70 (1988)
4. • Journal article

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   A physically-based C-infinity-continuous model for accumulation-mode SOI pMOSFET's

   Iniguez, B.[UCL] Flandre, Denis[UCL] Gentinne, B.[UCL] Dessard, V.[UCL] (1999) IEEE Transactions on Electron Devices — Vol. 46, no. 12, p. 2295-2303 (1999)
5. • Journal article

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   A revised reverse gated-diode technique for determining generation parameters in thin-film silicon-on-insulator devices and its application at high temperatures

   Rudenko, Tamara Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] Dessard, Vincent[UCL] (2005) Journal of Applied Physics — Vol. 97, no. 9, p. 9 pages (2005)
6. • Journal article

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   Physical modeling and design of thin-film SOI lateral PIN photodiodes

   Afzalian, Aryan[UCL] Flandre, Denis[UCL] (2005) IEEE Transactions on Electron Devices — Vol. 52, no. 6, p. 1116-1122 (2005)
7. • Journal article

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   Advantages of the graded-channel SOIFD MOSFET for application as a quasi-linear resistor

   Cerdeira, A. Flandre, Denis[UCL] Aleman, MA Pavanello, Marcelo Antonio Martino, JA Vancaillie, Laurent[UCL] (2005) IEEE Transactions on Electron Devices — Vol. 52, no. 5, p. 967-972 (2005)
8. • Journal article

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   A new multi-valued current-mode adder based on negative-differential resistance using ULP diodes

   Hassoune, H Flandre, Denis[UCL] Legat, Jean-Didier[UCL] Drummond, A Gaudissart, Anne[UCL] Bol, David[UCL] Levacq, D. (2005) Solid-State Electronics — Vol. 49, no. 7, p. 1185-1191 (2005)
9. • Journal article

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   A New Analytical Model for the 2-terminal Mos Capacitor On Soi Substrate

   Flandre, Denis Vandewiele, F. (1988) IEEE Electron Device Letters — Vol. 9, no. 6, p. 296-299 (1988)
10. • Journal article

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    Modeling of the bulk versus SOICMOS performances for the optimal design of APS circuits in low-power low-voltage applications

    Afzalian, Aryan[UCL] Flandre, Denis[UCL] (2003) IEEE Transactions on Electron Devices — Vol. 50, no. 1, p. 106-110 (January 2003)
11. • Journal article

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    25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process

    Adriaensen, Stéphane[UCL] Flandre, Denis[UCL] Dessard, Vincent[UCL] (2002) Electronics Letters — Vol. 38, no. 19, p. 1103-1104 (2002)
12. • Journal article

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    Interpretation of Quasi-static C-v Characteristics of Mosos Capacitors On Soi Substrates

    Flandre, Denis[UCL] Loo, T. Verlinden, P. Vandewiele, F. (1991) Electronics Letters — Vol. 27, no. 1, p. 43-44 (1991)
13. • Speech

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    Electrical Characterization of SOI Solar Cells in a Wide Temperature Range

    de Souza, Michelly Bulteel, Olivier[UCL] Flandre, Denis[UCL] Pavanello, Marcello (2010) IEEE International Silicon on Insulator Conference (SOI 2010) — San Diego/CA (USA)
14. • Journal article

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    Total-dose effects in double-gate-controlled NPN bipolar transistors

    Vandooren, Anne Yuan, Jang-Gn Flandre, Denis[UCL] Colinge, Jean-Pierre[UCL] (2001) IEEE Transactions on Nuclear Science — Vol. 48, no.5, p. 1694-1699 (2011)
15. • Speech

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    A 110 nA pacemaker sensing channel in CMOS on silicon-on-insulator

    Silveira, Fernando Flandre, Denis[UCL] (2002) IEEE International Symposium on Circuits and Systems (ISCAS'2002) — Scottsdale, Arizona (USA)
16. • Speech

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    Design methodology for CMOS gain-boosted folded-cascode OTA with application to SOI technology

    Flandre, Denis[UCL] Viviani, A.[UCL] Eggermont, Jean-Pierre[UCL] Gentinne, Bernard[UCL] Jespers, Paul[UCL] (1996) ESSCIRC'96 — Neuchatel (Suisse)
17. • Journal article

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    Measurement of Intrinsic Gate Capacitances of Soi Mosfets

    Flandre, Denis[UCL] Vandewiele, F.[UCL] Jespers, PGA.[UCL] Haond, M. (1990) IEEE Electron Device Letters — Vol. 11, no. 7, p. 291-293 (1990)
18. • Speech

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    Compact Model for Single Event Transients and Total Dose Eects at High Temperatures for Partially Depleted SOI MOSFETs

    Alvarado Pulido, José Joaquin[UCL] Kilchytska, Valeriya[UCL] Boufouss, El Hafed[UCL] Flandre, Denis[UCL] (2010) 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010) — Gaeta
19. • Speech

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    Compact Modeling Techniques in Thin-Film SOI MOSFETs

    Iniguez, Benjamin Flandre, Denis[UCL] (2008) MOS Modeling and Parameter Extraction ESSDERC/ESSCIRC Workshop — Edinburgh (UK)
20. • Speech

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    High density array of size controlled silicon nanodots for all Si solar cells

    Delamare, Romain[UCL] Yedji, Mourad[FUNDP] Demarche, Julien[FUNDP] Terwagne, Guy[FUNDP] Flandre, Denis[UCL] (2011) 26th European Photovoltaic solar energyconference — Hambourg (Allemagne)
21. • Speech

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    Characterization of Quantum Efficiency and Effective Lifetime in Thin Ungated SOI Lateral PIN Photodiodes in the UV-Range

    Afzalian, Aryan[UCL] Torfs, T. Van hoof, C. Flandre, Denis[UCL] (2006) Eurosoi 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits — Grenoble (France)
22. • Journal article

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    Validation of a Novel ultra-thin silicon Strip Detector for Hadron Therapy beam monitoring

    Bouterfa, Mohamed[UCL] Flandre, Denis[UCL] (2013) Journal of Circuits Systems and Computers — Vol. 22, no.9, p. 6 (05/11/2013)
23. • Journal article

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    A new memory effect (MSD) in fully depleted SOI MOSFETs

    Bawedin, Maryline[UCL] Cristoloveanu, Sorin Yun, JG Flandre, Denis[UCL] (2005) Solid-State Electronics — Vol. 49, no. 9, p. 1547-1555 (2005)
24. • BookChapter

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    Smart Energy Management and Conversion

    Wang, Wensi Rohan, James F. Wang, NingNing Hayes, Mike Romani, Aldo Macrelli, Enrico Dini, Michele Filippi, Matteo Tartagni, Marco Flandre, Denis[UCL] (2014) Beyond-CMOS Nanodevices 1 — [ISBN : 978-1-84821-654-9]
25. • Journal article

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    Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer

    de Souza, Michelly Flandre, Denis[UCL] Pavanello, Marcelo Antonio (2008) Solid-State Electronics — Vol. 52, no. 12, p. 1933-1938 (2008)

Pages