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Displaying 7 results.
    • Journal article
    A physically-based C-infinity-continuous fully-depleted SOI MOSFET model for analog applications
    Iniguez, B. Ferreira, LF Gentinne, B. Flandre, Denis[UCL] (1996) IEEE Transactions on Electron Devices — Vol. 43, no. 4, p. 568-575 (1996)
    • Journal article
    New empirical model for leakage drain current of SOI MOSFETs valid from room to high temperatures
    Bellodi, Marcello Martino, Joao Antonio Flandre, Denis[UCL] (1996) Journal of Solid-State Devices and Circuits — p. 7-10 (1996)
    • Journal article
    Modelling and application of fully depleted SOI MOSFETs for low voltage, low power analogue CMOS circuits
    Flandre, Denis[UCL] Ferreira, L. F. Jespers, Paul[UCL] Colinge, Jean-Pierre[UCL] (1996) Solid-State Electronics — Vol. 39, no. 4, p. 455-460 (1996)
    • Journal article
    Measurement and two-dimensional simulation of thin-film SOI MOSFETs: Intrinsic gate capacitances at elevated temperatures
    Gentinne, B.[UCL] Flandre, Denis[UCL] Colinge, Jean-Pierre[UCL] Vandewiele, Fernand[UCL] (1996) Solid-State Electronics — Vol. 39, no. 11, p. 1613-1619 (1996)
    • Journal article
    Improvement of SOI MOS current-mirror performances using serial-parallel association of transistors
    Deceuster, D.[UCL] Flandre, Denis[UCL] Colinge, Jean-Pierre[UCL] Cristoloveanu, Sorin (1996) Electronics Letters — Vol. 32, no. 4, p. 278-279 (1996)
    • Journal article
    Measurement and modeling of thin-film accumulation-mode SOI p-MOSFET intrinsic gate capacitances
    Gentinne, B.[UCL] Flandre, Denis[UCL] Colinge, Jean-Pierre[UCL] (1996) Solid-State Electronics — Vol. 39, no. 7, p. 1071-1078 (1996)
    • Journal article
    The effect of series resistance on threshold voltage measurement techniques for fully depleted SOI MOSFETs
    Wainwright, SP Hall, S. Flandre, Denis[UCL] (1996) Solid-State Electronics — Vol. 39, no. 1, p. 89-94 (1996)