Strain engineering for opto-electronic properties change of Si & Ge at nanometer scale and an improved data reduction scheme for lab-on-chip devices

Strain-engineering of opto-electronic properties of semiconducting material is an emerging field. This work was supposed to tie together the optical band gap and mechanical strain applied on microscopic Ge and Si thin films, using on-chip tensile testing devices as a mean to simultaneously apply strain in multiple samples. This work was interrupted by the Covid19 crisis and couldn't be completed. Instead, a new data reduction scheme has been developped for measurements made on on-chip tensile testing devices. The new data reduction scheme incorporates a correction model that improves measures made on the on-chip tensile testing devices and generates corrected stress-strain curves, from experimental displacement measurements. A tool has been developed to directly apply the corrections on raw data. This tool has been implemented using the Python programming language. Finally, a sustainability assessment of the fabrication of integrated light-emitting devices has been carried out, as part of the initial subject of this master thesis.