Strain engineering for opto-electronic properties change of Si & Ge at nanometer scale and an improved data reduction scheme for lab-on-chip devices

Référence bibliographique Pip, Alex. Strain engineering for opto-electronic properties change of Si & Ge at nanometer scale and an improved data reduction scheme for lab-on-chip devices. Ecole polytechnique de Louvain, Université catholique de Louvain, 2020. Prom. : Raskin, Jean-Pierre.
Permalien http://hdl.handle.net/2078.1/thesis:25374