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Displaying 18 results.
    • Journal article
    Measurement of Intrinsic Gate Capacitances of Soi Mosfets
    Flandre, Denis[UCL] Vandewiele, F.[UCL] Jespers, PGA.[UCL] Haond, M. (1990) IEEE Electron Device Letters — Vol. 11, no. 7, p. 291-293 (1990)
    • Journal article
    An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models
    Pereira, A.S.N. de Streel, Guerric[UCL] Planes, N. Haond, M. Giacomini, R. Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] (2017) Solid-State Electronics — Vol. 128, p. 67-71 (15/10/2016)
    • Speech
    Intrinsic gate capacitances of SOI MOSFETs: measurement, modelling, floating substrate effects
    Flandre, Denis[UCL] Van de Wiele, Fernand[UCL] Jespers, P.G.A.[UCL] Haond, M.[UCL] (1990) 20th European Solid State Device Research Conference (ESSDERC 1990) — Nottingham (UK)
    • Speech
    Analysis and modelling of Temperature Effect on DIBL in UTBB FD SOI MOSFETs
    Pereira, Arianne Soares do Nascimento[UCL] de Streel, Guerric[UCL] Planes, N. Haond, M. Giacomini, R. Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] (2016) 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016) — Vienne (Austria)
    • Speech
    Comparative study of effect of parasitic elements on RF FoM in 28 nm FD SOI and Bulk technologies
    Kazemi Esfeh, B. Kilchytska, Valeriya[UCL] Barral, V. Planes, N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2015) IEEE International SOI-3D-Subthreshold Microelectronics Technology Unified Conference – S3S’15 — Rohnert Park, CA (USA)
    • Speech
    Self-heating in 28 nm Bulk and FD SOI
    Makovejev, S. Planes, N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] Kilchytska, Valeriya[UCL] (2015) 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS 2015 — Bologna (Italy)
    • Journal article
    28 nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements extraction at Cryogenic Temperature down to 77 K
    Kazemi Esfeh, Babak[UCL] Kilchytska, Valeriya[UCL] Planes,N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2019) I E E E Journal of the Electron Devices Society — Vol. 7, p. 810816 (2019)
    • Speech
    28 FDSOI Analog and RF Figures of merit at Cryogenic Temperatures
    Kazemi Esfeh, Babak[UCL] Masselus, Matthieu[UCL] Planes, N. Haond, M. Raskin, Jean-Pierre[UCL] Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] (2018) 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS 2018 — Granada (Spain)
    • Speech
    28 FDSOI RF Figures of Merits and Parasitic Elements at Cryogenic Temperature
    Kazemi Esfeh, Babak[UCL] Kilchytska, Valeriya[UCL] Planes, N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2018) IEEE S3S Conference — San Francisco (USA)
    • Speech
    Back-gate bias effect on FDSOI MOSFET RF Figures of Merits and Parasitic Elements
    Kazemi Esfeh, Babak[UCL] Kilchytska, Valeriya[UCL] Parvais, Bertrand Planes, N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2017) 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2017) — Athens (Greece)
    • Speech
    Back-gate bias effect on 3-port UTBB-FDSOI non-linearity performance
    Kazemi Esfeh, Babak[UCL] Kilchytska, Valeriya[UCL] Parvais, Bertrand Planes, Nicolas Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2017) 2017 47th European Solid-State Device Research Conference (ESSDERC 2017) — Leuven (Belgium)
    • Journal article
    Assessment of 28nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements
    Kazemi Esfeh, Babak[UCL] Kilchytska, Valeriya[UCL] Barral, V. Planes, N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2015) Solid-State Electronics — Vol. 117, p. 130-137 (11/12/2015)
    • Journal article
    Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI
    Makovejev, Sergej[UCL] Planes, N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] Kilchytska, Valeriya[UCL] (2015) Solid-State Electronics — Vol. 115, p. 219-224 (2015)
    • Speech
    Variability of UTBB MOSFET Analog Figures of Merit in Wide Frequency Range
    Makovejev, Sergej[UCL] Kazemi Esfeh, Babak[UCL] Raskin, Jean-Pierre[UCL] Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Barral, V. Planes, N. Haond, M. (2014) 2014 4th European Solid State Device Research Conference (ESSDERC 2014) — Venise (Italie)
    • Speech
    Self-Heating in 28 nm Bulk and FDSOI
    Makovejev, Sergej[UCL] Planes, N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] Kilchytska, Valeriya[UCL] (2015) 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2015) — Bologne (Italie)
    • Speech
    28 nm FD SOI Technology Platform RF FoM
    Kazemi Esfeh, Babak[UCL] Kilchytska, Valeriya[UCL] Barral, V. Planes, N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2014) 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2014) — Millbrae (USA)
    • Speech
    Wide Frequency Band Assessment of 28 nm FDSOI Technology Platform for Analogue and RF Applications
    Makovejev, Sergej[UCL] Kazemi Esfeh, Babak[UCL] Barral, V. Planes, N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] Kilchytska, Valeriya[UCL] (2014) 15th International Conference on Ultimate Integration on Silicon (ULIS 2014) — Stockholm (Sweden)
    • Journal article
    Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications
    Makovejev, Sergej[UCL] Kazemi Esfeh, Babak[UCL] Barral, V. Planes, N. Haond, M. Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] Kilchytska, Valeriya[UCL] (2015) Solid-State Electronics — , p. 6 (2015)