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1. • Journal article

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   Frequency Variation of the Small-Signal Output Conductance of Decananometer MOSFETs Due to Substrate Crosstalk

   Kilchytska, Valeriya[UCL] Pailloncy, Guillaume[UCL] Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] Collaert, N. Jurczak, M. Flandre, Denis[UCL] (2007) IEEE ELECTRON DEVICE LETTERS — Vol. 28, no. 5, p. 419-421 (May 2007)
2. • Journal article

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   Impact of High Temperature Up to 175 ∘ C on the DC and RF Performances of 22-nm FD-SOI MOSFETs

   Halder, Arka[UCL] Nyssens, Lucas[UCL] Vanbrabant, Martin[UCL] Rack, Martin[UCL] Lederer, Dimitri[UCL] Kilchytska, Valeriya[UCL] Raskin, Jean-Pierre[UCL] (2023) IEEE Transactions on Electron Devices — , p. 1-6 (2023)
3. • Journal article

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   Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs

   Halder, Arka[UCL] Nyssens, Lucas[UCL] Lederer, Dimitri[UCL] Kilchytska, Valeriya[UCL] Raskin, Jean-Pierre[UCL] (2023) Solid-State Electronics — Vol. 207, p. 108706 (2023)
4. • Journal article

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   Time Dependence of RF Losses in GaN-on-Si Substrates

   Cardinael, Pieter[UCL] Yadav, Sachin Zhao, Ming Rack, Martin[UCL] Lederer, Dimitri[UCL] Collaert, Nadine Parvais, Bertrand Raskin, Jean-Pierre[UCL] (2022) IEEE Microwave and Wireless Components Letters — Vol. 32, no.6, p. 688-691 (2022)
5. • Journal article

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   High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies

   Nyssens, Lucas[UCL] Rack, Martin[UCL] Nabet, Massinissa[UCL] Schwan, C. Zhao, Z. Lhemann, S. Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] (2023) Solid-State Electronics — Vol. 205 (2023)
6. • Journal article

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   Impact of substrate resistivity on spiral inductors at mm-wave frequencies

   Nyssens, Lucas[UCL] Rack, Martin[UCL] Schwan, Christophe Zhao, Zhixing Lehmann, Steffen Hermann, Tom Allibert, Frederic Aulnette, Cécile Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] (2022) Solid-State Electronics — Vol. 194 (2022)
7. • Journal article

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   Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz

   L. Nyssens Ma, Shiqi[UCL] Rack, Martin[UCL] Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] (2023) IEEE Journal of the Electron Devices Society — Vol. 11, no.11, p. 650 - 657 (2023)
8. • Journal article

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   Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs

   Halder, Arka[UCL] Nyssens, Lucas[UCL] Rack, Martin[UCL] Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] Kilchytska, Valeriya[UCL] (2021) Solid-State Electronics — Vol. 184, p. 108088 (2021)
9. • Journal article

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   An investigation of high temperature effects on CPW and MSL on SOI substrate for RF applications

   Si Moussa, M. Pavageau, C. Lederer, Dimitri[UCL] Picheta, L. Danneville, F. Raskin, Jean-Pierre[UCL] Fel, N. Russat, J. Vanhoenacker-Janvier, Danielle[UCL] (2006) Solid-State Electronics — Vol. 50, no.12, p. 1822-1827 (2006)
10. • Journal article

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    High-Frequency Noise Performance of 60-nm Gate-Length FinFETs

    Raskin, Jean-Pierre[UCL] Pailloncy, Guillaume Lederer, Dimitri Danneville, Francois Dambrine, Gilles Decoutere, Stefaan[UCL] Mercha, Abdelkarim[UCL] Parvais, Bertrand[UCL] (2008) IEEE Transactions on Electron Devices — Vol. 55, no. 10, p. 2718-2727 (2008)
11. • Journal article

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    RF performance of a commercial SOI technology transferred onto a passivated HR silicon substrate

    Lederer, Dimitri Raskin, Jean-Pierre[UCL] (2008) IEEE Transactions on Electron Devices — Vol. 55, no. 7, p. 1664-1671 (2008)
12. • Journal article

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    Characterization of the body node in PD SOI MOSFETs using multiport VNA measurements

    Lederer, Dimitri Raskin, Jean-Pierre[UCL] (2007) IEEE Transactions on Electron Devices — Vol. 54, no. 11, p. 3030-3039 (2007)
13. • Journal article

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    Fabrication and Characterization of High Resistivity SOI Wafers for RF Applications

    Lederer, Dimitri[UCL] Roda Neve, Cesar[UCL] Olbrechts, Benoit[UCL] Raskin, Jean-Pierre[UCL] (2008) ECS Transactions — Vol. 16, no. 8, p. 165-174 (2008)
14. • Journal article

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    FinFET analogue characterization from DC to 110 GHz

    Lederer, Dimitri[UCL] Kilchytska, Valeriya[UCL] Rudenko, Tamara Collaert, Nadine[UCL] Flandre, Denis[UCL] Dixit, A. De Meyer, K. Raskin, Jean-Pierre[UCL] (2005) Solid-State Electronics — Vol. 49, no. 9, p. 1488-1496 (September 2005)
15. • Journal article

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    On the substrate-related variation of the small-signal output conductance in advanced MOSFETs

    Kilchytska, Valeriya[UCL] Pailloncy, Guillaume[UCL] Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] Collaert, N. Jurczak, M. Flandre, Denis[UCL] (2007) IEEE Electron Device Letters — p. 419-421 (2007)
16. • Journal article

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    What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?

    Dambrine, G. Raynaud, C. Lederer, Dimitri[UCL] Dehan, Morin[UCL] Rozeaux, O Vanmackelberg, M Danneville, F. Lepilliet, S Raskin, Jean-Pierre[UCL] (2003) IEEE Electron Device Letters — Vol. 24, no. 3, p. 189-191 (2003)
17. • Journal article

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    Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers

    Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] (2003) Solid-State Electronics — Vol. 47, no. 11, p. 1927-1936 (2003)
18. • Journal article

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    Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs

    Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Levacq, David[UCL] Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] (2003) IEEE Electron Device Letters — Vol. 24, no. 6, p. 414-416 (2003)
19. • Journal article

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    AC behavior of gate-induced floating body effects in ultrathin oxide PD SOI MOSFETs

    Lederer, Dimitri[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2004) IEEE Electron Device Letters — Vol. 25, no. 2, p. 104-106 (February 2004)
20. • Journal article

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    Effective resistivity of fully-processed SOI substrates

    Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] (2005) Solid-State Electronics — Vol. 49, no. 3, p. 491-496 (2005)
21. • Journal article

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    High frequency degradation of body-contacted PD SOI MOSFET output conductance

    Lederer, Dimitri[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2005) Semiconductor Science and Technology — Vol. 20, no. 5, p. 469-472 (2005)
22. • Journal article

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    Accurate effective mobility extraction by split C-V technique in SOI MOSFETs: Suppression of the influence of floating-body effects

    Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Lederer, Dimitri[UCL] Collaert, Nadine Raskin, Jean-Pierre[UCL] (2005) IEEE Electron Device Letters — Vol. 26, no. 10, p. 749-751 (2005)
23. • Journal article

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    New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity

    Lederer, Dimitri[UCL] Raskin, Jean-Pierre[UCL] (2005) IEEE Electron Device Letters — Vol. 26, no. 11, p. 805-807 (2005)
24. • Journal article

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    Analog/RF performance of multiple gate SOI devices: Wideband simulations and characterization

    Raskin, Jean-Pierre[UCL] Flandre, Denis[UCL] Chung, TM Kilchytska, Valeriya[UCL] Lederer, Dimitri[UCL] (2006) IEEE Transactions on Electron Devices — Vol. 53, no. 5, p. 1088-1095 (2006)
25. • Journal article

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    Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer

    Roda Neve, Cesar[UCL] Kilchytska, Valeriya[UCL] Alvarado, Jose Joaquin[UCL] Lederer, Dimitri Militaru, Otilia[UCL] Flandre, Denis[UCL] Raskin, Jean-Pierre[UCL] (2011) Microelectronics Reliability — Vol. 51, no. 2, p. 326-331 (Février 2011)

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