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Time and Frequency Domain Characterization of Transistor Self-Heating

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Makovejev, Sergej [UCL] Olsen, S.H. [Newcastle University, UK] Kilchytska, Valeriya [UCL] Raskin, Jean-Pierre [UCL]

Pulsed I–V and AC conductance or RF characterization techniques, within the time and the frequency domain, respectively, represent two approaches for evaluating self-heating in MOSFETs. In this paper, these methods are compared. Advantages and limitations of each technique are discussed and experimentally verified in silicon-on-insulator (SOI) MOSFETs. It is demonstrated that RF technique and the pulsed I–V hot chuck method agree well for the studied 130-nm-node partially depleted SOI devices. Applicability of the techniques for advanced technologies is discussed.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2013
Language Anglais
Journal information "IEEE Transactions on Electron Devices" - Vol. 60, no.6, p. 1844-1851 (06/2013)
Peer reviewed yes
Publisher I E E E
issn 0018-9383
e-issn 1557-9646
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Pulsed I–V ; RF ; self-heating ; silicon on insulator (SOI)
Links
Bibliographic reference Makovejev, Sergej ; Olsen, S.H. ; Kilchytska, Valeriya ; Raskin, Jean-Pierre. Time and Frequency Domain Characterization of Transistor Self-Heating. In: IEEE Transactions on Electron Devices, Vol. 60, no.6, p. 1844-1851 (06/2013)
Permanent URL http://hdl.handle.net/2078.1/140976