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Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories

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Tang, Xiaohui [UCL] Krzeminski, Christophe [IEMN/ISEN UMR CNRS 8520] Lecavalier des Etangs-Levallois, Aurélien [IEMN/ISEN UMR CNRS 8520] Chen, Zhenkun [IEMN/ISEN UMR CNRS 8520] Dubois, Emmanuel [IEMN/ISEN UMR CNRS 8520] Reckinger, Nicolas [UCL] Flandre, Denis [UCL] Francis, Laurent [UCL] Raskin, Jean-Pierre [UCL]

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2011
Language Anglais
Journal information "Nano Letters : a journal dedicated to nanoscience and nanotechnology" - Vol. 11, no. 11, p. 4520-4526 (3 octobre 2011)
Peer reviewed yes
Publisher American Chemical Society ((United States) Washington)
issn 1530-6984
e-issn 1530-6992
Publication status Publié
Affiliations UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
IEMN/ISEN UMR CNRS 8520 - Institut d'Electronique, de Microélectronique et de Nanotechnologie
University Stuttgart - Institut für Halbleitertechnik
Tyndall National Institute - University College Cork
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Bibliographic reference Tang, Xiaohui ; Krzeminski, Christophe ; Lecavalier des Etangs-Levallois, Aurélien ; Chen, Zhenkun ; Dubois, Emmanuel ; et. al. Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories. In: Nano Letters : a journal dedicated to nanoscience and nanotechnology, Vol. 11, no. 11, p. 4520-4526 (3 octobre 2011)
Permanent URL http://hdl.handle.net/2078.1/93789