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Erbium Silicide Growth in the Presence of Residual Oxygen

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Reckinger, Nicolas [UCL] Tang, Xiaohui [UCL] Godey, Sylvie [IEMN/ISEN, UMR CNRS] Dubois, Emmanuel [IEMN/ISEN, UMR CNRS] Laszcz, Adam [Institute of Electron Technology] Vlad, Alexandru [UCL] Dutu, Constantin Augustin [UCL] Raskin, Jean-Pierre [UCL]

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300°C, and annealed at 600°C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300°C and crystalline at 600°C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600°C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2011
Language Anglais
Journal information "Journal of the Electrochemical Society" - Vol. 158, no. 7, p. H715-H723 (11/05/2011)
Peer reviewed yes
issn 0013-4651
Publication status Publié
Affiliations UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
IEMN/ISEN, UMR CNRS - Autre
Institute of Electron Technology - Autre
Links
  1. Kim I., Han S. K., Osburn C. M., Effect of Post-metallization Annealing for Alternative Gate Stack Devices, 10.1149/1.1636181
  2. He Weiming, Schuetz Steven, Solanki Raj, Belot John, McAndrew James, Atomic Layer Deposition of Lanthanum Oxide Films for High-κ Gate Dielectrics, 10.1149/1.1724824
  3. Pan Tung-Ming, Liao Chao-Sung, Hsu Hui-Hsin, Chen Chun-Lin, Lee Jian-Der, Wang Kuan-Ti, Wang Jer-Chyi, Excellent frequency dispersion of thin gadolinium oxide high-k gate dielectrics, 10.1063/1.2152107
  4. Pan Tung-Ming, Chen Chun-Lin, Yeh Wen Wei, Hou Sung-Ju, Structural and electrical characteristics of thin erbium oxide gate dielectrics, 10.1063/1.2399938
  5. Choi Chel-Jong, Jang Moon-Gyu, Kim Yark-Yeon, Jun Myung-Sim, Kim Tae-Youb, Song Myeong-Ho, Electrical and structural properties of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films, 10.1063/1.2753720
  6. Duboz J. Y., Badoz P. A., d’Avitaya F. Arnaud, Chroboczek J. A., Electronic transport properties of epitaxial erbium silicide/silicon heterostructures, 10.1063/1.102392
  7. Unewisse M. H., Storey J. W. V., Conduction mechanisms in erbium silicide Schottky diodes, 10.1063/1.352899
  8. Reckinger Nicolas, Tang Xiaohui, Bayot Vincent, Yarekha Dmitri A., Dubois Emmanuel, Godey Sylvie, Wallart Xavier, Larrieu Guilhem, Łaszcz Adam, Ratajczak Jacek, Jacques Pascal J., Raskin Jean-Pierre, Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap, 10.1063/1.3010305
  9. Jang Moongyu, Kim Yarkyeon, Shin Jaeheon, Lee Seongjae, Park Kyoungwan, A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor, 10.1063/1.1645665
  10. Eu Jin Tan, Kin-Leong Pey, Singh N., Guo-Qiang Lo, Dong Zhi Chi, Yoke King Chin, Keat Mun Hoe, Guangda Cui, Pooi See Lee, Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel, 10.1109/led.2008.2004508
  11. Larrieu G., Yarekha D.A., Dubois E., Breil N., Faynot O., Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI, 10.1109/led.2009.2033085
  12. Pahun L., Campidelli Y., d’Avitaya F. Arnaud, Badoz P. A., Infrared response of Pt/Si/ErSi1.7heterostructure: Tunable internal photoemission sensor, 10.1063/1.107393
  13. Baglin J. E., d’Heurle F. M., Petersson C. S, The formation of silicides from thin films of some rare‐earth metals, 10.1063/1.91559
  14. Muret P., Nguyen Tan T. A., Frangis N., Van Landuyt J., Unpinning of the Fermi level at erbium silicide/silicon interfaces, 10.1103/physrevb.56.9286
  15. Veuillen J.Y., Tan T.A.Nguyen, Lollman D.B.B., Guerfi N., Cinti R., Electronic properties of epitaxial erbium silicide, 10.1016/0039-6028(91)91029-w
  16. Wetzel P., Haderbache L., Pirri C., Peruchetti J.C., Bolmont D., Gewinner G., Electronic structure of epitaxial erbium silicide films on Si(111), 10.1016/0039-6028(91)91101-3
  17. Tang Xiaohui, Katcki J., Dubois E., Reckinger N., Ratajczak J., Larrieu G., Loumaye P., Nisole O., Bayot V., Very low Schottky barrier to n-type silicon with PtEr-stack silicide, 10.1016/s0038-1101(03)00256-9
  18. Jiang Yu-Long, Xie Qi, Detavernier Christophe, Van Meirhaeghe R. L., Ru Guo-Ping, Qu Xin-Ping, Li Bing-Zong, Huang Anping, Chu Paul K., Oxidation suppression in ytterbium silicidation by Ti∕TiN bicapping layer, 10.1116/1.2464123
  19. Huang W., Ru G.P., Jiang Y.L., Qu X.P., Li B.Z., Liu R., Improvement of Er-silicide formation on Si(100) by W capping, 10.1016/j.tsf.2007.12.154
  20. Lollman D.B.B., Nguyen Tan T.A., Veuillen J.-Y., A photoemission study of the interdiffusion of Si in Er films deposited on Si(111)(7 × 7) at room temperature, 10.1016/0039-6028(92)91376-m
  21. Gokhale Shubha, Mahamuni Shailaja, Deshmukh S.V., Rao V.J., Nigavekar A.S., Kulkarni S.K., Photoemission and x-ray diffraction study of the interface, 10.1016/0039-6028(90)90525-d
  22. Wetzel P., Haderbache L., Pirri C., Peruchetti J. C., Bolmont D., Gewinner G., Room-temperature growth of Er films on Si(111): A photoelectron spectroscopy investigation, 10.1103/physrevb.43.6620
  23. Guerfi N., Tan T.A. Nguyen, Veuillen J.Y., Lollman D.B., Oxidation of thin ErSi1.7 overlayers on Si(111), 10.1016/0169-4332(92)90278-6
  24. Kennou S., Ladas S., Grimaldi M.G., Nguyen Tan T.A., Veuillen J.Y., Oxidation of thin erbium and erbium silicide overlayers in contact with silicon oxide films thermally grown on silicon, 10.1016/0169-4332(96)00034-7
  25. Netzer F.P., Wille R.A., Grunze M., Ultra-violet photoemission of erbium exposed to oxygen, water and hydrogen, 10.1016/0039-6028(81)90308-3
  26. Uwamino Y., Ishizuka T., Yamatera H., X-ray photoelectron spectroscopy of rare-earth compounds, 10.1016/0368-2048(84)80060-2
  27. Swami G. T. K., Stageberg F. E., Goldman A. M., XPS characterization of erbium sesquioxide and erbium hydroxide, 10.1116/1.572568
  28. Reckinger Nicolas, Bayot Vincent, Yarekha Dmitri A., Dubois Emmanuel, Godey Sylvie, Wallart Xavier, Larrieu Guilhem, Łaszcz Adam, Ratajczak Jacek, Jacques Pascal J., Raskin Jean-Pierre, Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing, 10.1063/1.3136849
  29. C. D. Wagner, W. M. Riggs, L. E. Davis, and J. F. Moulder , inHandbook of X-Ray Photoelectron Spectroscopy, 1st ed., G. E. Muilenberg , Editor, Perkin-Elmer, Eden Prairie (1979).
  30. Hafidi K., Ijdiyaou Y., Azizan M., Ameziane E.L., Outzourhit A., Nguyen Tan T.A., Brunel M., Interaction of oxygen with (Er + Si): formation of erbium pyrosilicate Er2Si2O7, 10.1016/s0169-4332(96)00560-0
  31. Larrieu G., Dubois E., Wallart X., Baie X., Katcki J., Formation of platinum-based silicide contacts: Kinetics, stoichiometry, and current drive capabilities, 10.1063/1.1605817
  32. Atuchin Victor V., Kesler Valery G., Pervukhina Natalia V., Zhang Zhaoming, Ti 2p and O 1s core levels and chemical bonding in titanium-bearing oxides, 10.1016/j.elspec.2006.02.004
  33. Demri B., Hage-Ali M., Moritz M., Kahn J.L., Muster D., X-ray photoemission study of the calcium/titanium dioxide interface, 10.1016/s0169-4332(96)00576-4
  34. Moses P. R., Wier Larry M., Lennox John C., Finklea H. O., Lenhard J. R., Murray Royce W., X-ray photoelectron spectroscopy of alkylaminesilanes bound to metal oxide electrodes, 10.1021/ac50026a010
  35. Ogama T., A new method to detect energy‐band bending using x‐ray photoemission spectroscopy, 10.1063/1.341919
  36. Anpo Masakazu, Nakaya Hiroaki, Kodama Sukeya, Kubokawa Yutaka, Domen Kazunari, Onishi Takaharu, Photocatalysis over binary metal oxides. Enhancement of the photocatalytic activity of titanium dioxide in titanium-silicon oxides, 10.1021/j100399a036
  37. Badrinarayanan S., Sinha S., Mandale A.B., XPS studies of nitrogen ion implanted zirconium and titanium, 10.1016/0368-2048(89)85018-2
  38. Gonbeau D., Guimon C., Pfister-Guillouzo G., Levasseur A., Meunier G., Dormoy R., XPS study of thin films of titanium oxysulfides, 10.1016/0039-6028(91)90640-e
  39. Huang W., Ru G. P., Jiang Y. L., Qu X. P., Li B. Z., Liu R., Lu F., Erbium silicide formation and its contact properties on Si(100), 10.1116/1.2831485
  40. Chen L.J, Solid state amorphization in metal/Si systems, 10.1016/s0927-796x(00)00023-1
  41. Campisi G. J., Bevolo A. J., Schmidt F. A., The Schottky barrier height and Auger studies of yttrium and yttrium silicide on silicon, 10.1063/1.328656
  42. Handbook of Chemistry and Physics, 79th ed., D. R. Lide , Editor, CRC, Boca Raton (1998).
  43. Baglin J. E. E., d’Heurle F. M., Petersson C. S., Diffusion marker experiments with rare‐earth silicides and germanides: Relative mobilities of the two atom species, 10.1063/1.329015
  44. Dubois Emmanuel, Larrieu Guilhem, Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors, 10.1063/1.1756215
  45. Tan Eu Jin, Bouville Mathieu, Chi Dong Zhi, Pey Kin Leong, Lee Pooi See, Srolovitz David J., Tung Chih Hang, Pyramidal structural defects in erbium silicide thin films, 10.1063/1.2162862
Bibliographic reference Reckinger, Nicolas ; Tang, Xiaohui ; Godey, Sylvie ; Dubois, Emmanuel ; Laszcz, Adam ; et. al. Erbium Silicide Growth in the Presence of Residual Oxygen. In: Journal of the Electrochemical Society, Vol. 158, no. 7, p. H715-H723 (11/05/2011)
Permanent URL http://hdl.handle.net/2078.1/85012