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On-wafer wideband characterization of advanced MOS technologies

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Raskin, Jean-Pierre [UCL]

A full frequency band analysis is precious for separating physical phenomena taking place in MOS devices. Based on the extraction of a wideband equivalent small-signal circuit, various MOS technologies can be fairly compared and compact models with increase validity domain can be established. The extracted values for the various parameters constituting the electrical equivalent circuit of a particular device are useful not only for integrated circuit designers but also for the engineers at the early stage of the technology development. In this paper, the wideband characterization of several advanced MOS transistors is presented and discussed.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2006
Conference "1st European Microwave Integrated Circuits Conference", Manchester, UK (10-13 September 2006)
Peer reviewed yes
Host document "1st European Microwave Integrated Circuits Conference (IEEE Cat.No.06EX1410)"- 4 pp.
Publisher IEEE
Publication status Publié
Affiliation UCL
Links
Bibliographic reference Raskin, Jean-Pierre. On-wafer wideband characterization of advanced MOS technologies.1st European Microwave Integrated Circuits Conference (Manchester, UK, 10-13 September 2006). In: 1st European Microwave Integrated Circuits Conference (IEEE Cat.No.06EX1410), IEEE2006, p.4 pp.
Permanent URL http://hdl.handle.net/2078.1/67899