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A revised reverse gated-diode technique for determining generation parameters in thin-film silicon-on-insulator devices and its application at high temperatures

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Rudenko, Tamara [1Institute of Semiconductor Physics, National Academy of Sciences of Ukraine] Flandre, Denis [UCL] Kilchytska, Valeriya [UCL] Dessard, Vincent [UCL]

In this paper the reverse gated-diode technique is examined for determining the carrier generation lifetime and surface generation velocities in thin-film silicon-on-insulator (SOI) devices. Using the modeling of the gate-controlled volume and surface generation components, SOI-specific aspects of the technique are highlighted. A reliable approach for extracting generation parameters in thin-film SOI devices from reverse gated-diode measurements is proposed and validated for high temperatures. The technique is demonstrated on the devices fabricated on two different SOI materials (zone-melt recrystallized and Unibond(R)), as examples of volume- and surface-dominated generation current behaviors. Finally, the technique is applied to characterize Unibond(R) SOI devices operating in the temperature range 100-300 degrees C to demonstrate the model and technique applicability at high temperatures. (C) 2005 American Institute of Physics.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2005
Language Anglais
Journal information "Journal of Applied Physics" - Vol. 97, no. 9, p. 9 pages (2005)
Peer reviewed yes
Publisher Amer Inst Physics (Melville)
issn 0021-8979
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Links
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Bibliographic reference Rudenko, Tamara ; Flandre, Denis ; Kilchytska, Valeriya ; Dessard, Vincent. A revised reverse gated-diode technique for determining generation parameters in thin-film silicon-on-insulator devices and its application at high temperatures. In: Journal of Applied Physics, Vol. 97, no. 9, p. 9 pages (2005)
Permanent URL http://hdl.handle.net/2078.1/39362