Lefebvre, Martin
[UCL]
Flandre, Denis
[UCL]
Bol, David
[UCL]
Temperature-independent current references operating in the nA range are rarely area-efficient due to the use of large resistors occupying a significant silicon area at this current level. In this paper, we introduce a nA-range constant-with-temperature (CWT) current reference relying on a self-cascode MOSFET (SCM), biased by a proportional-to-absolute-temperature voltage with a CWT offset voltage. The proposed reference has been fabricated in a 22-nm fully-depleted silicon-on-insulator (FDSOI) technology and, as a result of using an SCM, occupies a silicon area of 0.0132 mm² at least 4× smaller than state-of-the-art CWT references operating in the same current range. It consumes 5.8 nW at 0.9 V and achieves a 0.9-nA current with a line sensitivity of 0.39 %/V and a temperature coefficient of 565 ppm/°C.
Bibliographic reference |
Lefebvre, Martin ; Flandre, Denis ; Bol, David. A 0.9-nA Temperature-Independent 565-ppm/°C Self-Biased Current Reference in 22-nm FDSOI.ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC) (Milan (Italy), du 19/09/2022 au 22/09/2022). In: Proceedings of the ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC), p. 469-472 |
Permanent URL |
http://hdl.handle.net/2078.1/266034 |