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30° Si(g) partial dislocation mobility in nitrogen-doped 4H-SiC

Bibliographic reference Idrissi, Hosni ; Pichaud, B. ; Regula, G. ; Lancin, M.. 30° Si(g) partial dislocation mobility in nitrogen-doped 4H-SiC. In: Journal of Applied Physics, Vol. 101, p. 113533 (2007)
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  1. Neudeck P.G., Okojie R.S., Liang-Yu Chen, High-temperature electronics - a role for wide bandgap semiconductors?, 10.1109/jproc.2002.1021571
  2. Rupp Roland, Zverev I., SiC Power Devices: How to be Competitive towards Si-Based Solutions?, 10.4028/
  3. Lendenmann H., Dahlquist Fanny, Johansson N., Söderholm R., Nilsson Per Åke, Bergman J. Peder, Skytt P., Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes, 10.4028/
  4. Bergman J. Peder, Lendenmann H., Nilsson Per Åke, Lindefelt Ulf, Skytt P., Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes, 10.4028/
  5. Galeckas A., Linnros J., Pirouz P., Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias, 10.1063/1.1496498
  6. Samant A.V., Hong M.H., Pirouz P., The Relationship between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals, 10.1002/1521-3951(200011)222:1<75::aid-pssb75>;2-0
  7. Demenet J.L., Hong Moon Hi, Pirouz P., Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples, 10.4028/
  8. Demenet J.-L, Hong M.H, Pirouz P, Plastic behavior of 4H-SiC single crystals deformed at low strain rates, 10.1016/s1359-6462(00)00495-4
  9. K. Maeda and S. Takeuchi, Dislocations in Solids, edited by H. Suzuki, T. Ninomiya, K. Sumino, and S. Takeuchi (University of Tokyo Press Tokyo, 1985), p. 433.
  10. George A., Rabier J., Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics, 10.1051/rphysap:01987002209094100
  11. Okojie Robert S., Xhang Ming, Pirouz Pirouz, Tumakha Sergey, Jessen Gregg, Brillson Leonard J., Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation, 10.1063/1.1415347
  12. Liu J. Q., Chung H. J., Kuhr T., Li Q., Skowronski M., Structural instability of 4H–SiC polytype induced by n-type doping, 10.1063/1.1463203
  13. Chung H. J., Liu J. Q., Skowronski M., Stacking fault formation in highly doped 4H-SiC epilayers during annealing, 10.1063/1.1519961
  14. Zhang M., McD. Hobgood H., Treu Michael, Pirouz P., Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates, 10.4028/
  15. Regula * G., Lancin M., Idrissi H., Pichaud B., Douin § J., Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC, 10.1080/09500830500157686
  16. Texier M., Regula G., Lancin M., Pichaud B., LACBED study of extended defects in 4H-SiC, 10.1080/09500830600873752
  17. J. P. Hirth and J. Lothe, Theory of Dislocations (Kreiger, Malabar, FL, 1992), p. 531.
  18. Pichaud B., Jean P., Minari F., Dislocation motion by double-kink migration in a bent crystal Velocity measurements in silicon, 10.1080/01418618608243606
  19. Pirouz P., Yang J.W., Polytypic transformations in SiC: the role of TEM, 10.1016/0304-3991(93)90146-o
  20. Sitch P. K., Jones R., Öberg S., Heggie M. I., Abinitioinvestigation of the dislocation structure and activation energy for dislocation motion in silicon carbide, 10.1103/physrevb.52.4951
  21. Blumenau A.T., Jones R., Öberg S., Briddon P.R., Frauenheim T., Basal plane partial dislocations in silicon carbide, 10.1016/j.physb.2003.09.046
  22. George A., Champier G., Velocities of screw and 60° dislocations in n- and p-type silicon, 10.1002/pssa.2210530216
  23. Chang K. J., Cohen Marvin L., Abinitiopseudopotential study of structural and high-pressure properties of SiC, 10.1103/physrevb.35.8196
  24. Madelung O., Physics of Group IV Elements and III-V Compounds, 17 (1982)
  25. Küsters K.H., Alexander H., Photoplastic effect in silicon, 10.1016/0378-4363(83)90312-1
  26. Imai Masato, Sumino Koji, In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals, 10.1080/01418618308245248
  27. Schaumburg Von Hanno, Geschwindigkeiten von Schrauben- und 60° -Versetzungen in Germanium, 10.1080/14786437208223864
  28. Skromme B.J., Palle K., Poweleit C.D., Bryant L.R., Vetter William M., Dudley Michael, Moore K., Gehoski T., Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers, 10.4028/
  29. Barthe Marie France, Desgardin P., Henry L., Corbel C., Britton D.T., Kögel Gottfried, Sperr Peter, Triftshäuser Werner, Vicente Patrice, diCioccio L., Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy, 10.4028/
  30. Haasen P., J. Phys. Colloq., 44, C3 (1981)
  31. Möller H.-J, The movement of dissociated dislocations in the diamond-cubic structure, 10.1016/0001-6160(78)90047-0
  32. H. Hong, A. V. Samant, P. Pirouz M., Stacking fault energy of 6H-SiC and 4H-SiC single crystals, 10.1080/014186100250615
  33. Iwata Hisaomi, Lindefelt Ulf, Öberg Sven, Briddon Patrick R., Cubic polytype inclusions in 4H–SiC, 10.1063/1.1534376