Idrissi, Hosni
[UCL]
Pichaud, B.
[Université Paul Cézanne, Aix-Marseille III]
Regula, G.
Lancin, M.
Well-controlled population of dislocations are introduced in 4H-SiC by bending in cantilever mode and annealing between 400 and 700°C. The introduced defects consist of double stacking faults, each bound by a pair of 30° Si(g) partial dislocations, and the expansion of which is asymmetric. The velocity of each individual 30° Si(g) pair is directly measured as a function of stress and temperature on the surface of samples etched after deformation. The activation energies of the 30° Si(g) partial dislocation pairs are strongly stress dependent, ranging between 1.25 and 1.7 eV. These values are lower than the ones derived from plasticity experiments. This is probably because 30° (Si(g) pairs and double stacking faults are generated in N-doped 4H-SiC (N=2 x 10(18) cm-3), with their development being promoted by quantum well action.
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Bibliographic reference |
Idrissi, Hosni ; Pichaud, B. ; Regula, G. ; Lancin, M.. 30° Si(g) partial dislocation mobility in nitrogen-doped 4H-SiC. In: Journal of Applied Physics, Vol. 101, p. 113533 (2007) |
Permanent URL |
http://hdl.handle.net/2078/195259 |