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Boosting the SOI MOSFET Electrical Performance by Using the Octogonal Layout Style in High Temperature Environment

Bibliographic reference Galembeck, Egon H.S. ; Renaux, Christian ; Flandre, Denis ; Finco, Saulo ; Gimenez, Salvador P.. Boosting the SOI MOSFET Electrical Performance by Using the Octogonal Layout Style in High Temperature Environment. In: IEEE Transactions on Device and Materials Reliability, Vol. 17, no.1, p. 1-8 (03/2017)
Permanent URL http://hdl.handle.net/2078.1/183152