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Engineering half-Heusler thermoelectric materials using Zintl chemistry

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Zeier, Wolfgang G. [Department of Materials Science and Engineering, Northweststern University, Evanston, USA] Schmitt, Jennifer [Institut für Anorganische und Analytische Chemie, Johannes Gutenberg - Universitat, Mainz, Germany] Hautier, Geoffroy [UCL] Aydemir, Umut [Department of Materials Science and Engineering, Northweststern University, Evanston, USA] Gibbs, Zachary M. [Devision of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, USA] Snyder, G. Jeffrey [Department of Materials Science and Engineering, Northwestern University, Evanston, USA]

Half-Heusler compounds based on XNiSn and XCoSb (X = Ti, Zr or Hf) have rapidly become important thermoelectric materials for converting waste heat into electricity. In this Review, we provide an overview on the electronic properties of half-Heusler compounds in an attempt to understand their basic structural chemistry and physical properties, and to guide their further development. Half-Heusler compounds can exhibit semiconducting transport behaviour even though they are described as ‘intermetallic’ compounds. Therefore, it is most useful to consider these systems as rigid-band semiconductors within the framework of Zintl (or valence-precise) compounds. These considerations aid our understanding of their properties, such as the bandgap and low hole mobility because of interstitial Ni defects in XNiSn. Understanding the structural and bonding characteristics, including the presence of defects, will help to develop different strategies to improve and design better half-Heusler thermoelectric materials.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2016
Language Anglais
Journal information "Nature Reviews Materials" - Vol. -, no. -, p. 16032 (2016)
Peer reviewed yes
issn 2058-8437
e-issn 2058-8437
Publication status Publié
Affiliation UCL - SST/IMCN/NAPS - Nanoscopic Physics
Links
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