User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

Global Variability of UTBB MOSFET in Subthreshold

Primary tabs

Makovejev, Sergej [UCL] Kazemi Esfeh, Babak [UCL] Andrieu, François [CEA-Leti, Grenoble/France] Raskin, Jean-Pierre [UCL] Flandre, Denis [UCL] Kilchytska, Valeriya [UCL]

Global variability of UTBB MOSFETs in subthreshold and off regimes is analyzed. Variability of the off-state drain current, subthreshold slope, DIBL, gate leakage current, threshold voltage and their correlations are considered. It is demonstrated that subthreshold drain current variability is not only dependent on the threshold voltage variability, but the effective body factor (incorporating short-channel effects) must also be taken into account.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2013
Language Anglais
Conference "IEEE S3S Conference 2013", Monterey, CA (USA) (du 07/10/2013 au 10/10/2013)
Peer reviewed yes
Host document "Proceedings of the IEEE S3S Conference 2013"- 2
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords MOSFET ; UTBB MOSFET
Links
Bibliographic reference Makovejev, Sergej ; Kazemi Esfeh, Babak ; Andrieu, François ; Raskin, Jean-Pierre ; Flandre, Denis ; et. al. Global Variability of UTBB MOSFET in Subthreshold.IEEE S3S Conference 2013 (Monterey, CA (USA), du 07/10/2013 au 10/10/2013). In: Proceedings of the IEEE S3S Conference 2013, 2013, p.2
Permanent URL http://hdl.handle.net/2078.1/140977