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Quasi-Double Gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applications

Bibliographic reference Kilchytska, Valeriya ; Bol, David ; De Vos, Julien ; Andrieu, François ; Flandre, Denis. Quasi-Double Gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applications. In: Solid-State Electronics, Vol. 84, p. 28-37 (15/03/2013)
Permanent URL http://hdl.handle.net/2078.1/128525