Raskin, Jean-Pierre
[UCL]
Dambrine, Gilles
[IEMN, Lille, France]
Vanhoenacker-Janvier, Danielle
[UCL]
The maturation of low cost SOI MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigourous in situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non--quasi--static small--signal model for MOSFET's. The extracted model is shown to be valid up to 40 GHz.
| Bibliographic reference |
Raskin, Jean-Pierre ; Dambrine, Gilles ; Vanhoenacker-Janvier, Danielle. Accurate SOI MOSFET Characterization at Microwave Frequencies. In: Electron Technology, Vol. 32, no.1/2, p. 72-80 (1999) |
| Permanent URL |
http://hdl.handle.net/2078.1/122091 |
