Yan, Ran
[Tyndall National Institute, University of Cork]
Afzalian, Aryan
[UCL]
Lee, Chi-Woo
[Tyndall National Institute, University of Cork]
Dehdashti Akhavan, Nima
[Tyndall National Institute, University of Cork]
Xiong, Weize
[Texas Instruments Inc., Dallas]
Colinge, Jean-Pierre
[Tyndall National Institute, University of Cork]
This work analyzes the performance of very narrow triple-gate SOI MOSFETs on the basis of experimental and 3D simulation data; Short channel effects (SCEs) are quite reduced in those devices due to the good electrostatic control by the surrounding gate and the high Lg/Wfin ratio. The experimental data indicate that SCEs of accumulation-mode (AM) triple gate devices are comparable to those observed in inversion-mode (IM) devices down to a agte length of 50 nm. This makes AM triple gate (or more generally, multi-gate) MOSFETs interesting devices for digital applications.
| Bibliographic reference |
Yan, Ran ; Afzalian, Aryan ; Lee, Chi-Woo ; Dehdashti Akhavan, Nima ; Xiong, Weize ; et. al. 3D simulation and measurement of very narrow AM and IM triple-gate MOSFETs.2008 China-Ireland International Conference on Information and Communication Technologies (CIICT 2008) (Beijing (China), du 26/09/2008 au 28/09/2008). In: Proceedings of the 2008 China-Ireland International Conference on Information and Communication Technologies (CIICT 2008), Curran Associates, Inc.2008, p. 627-630 |
| Permanent URL |
http://hdl.handle.net/2078.1/120912 |
