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Layer-charge instability in unbalanced bilayer systems in the quantum Hall regime.

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Tutuc, E. [Princeton University] Pillarisetty, R. [Princeton University] Melinte, Sorin [UCL] De Poortere, E.P. [Princeton University] Shayegan, M. [Princeton University]

Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic-field positions where either the majority or minority layer is at Landau level filling factor one. At a fixed field in the hysteretic regions, the resistance exhibits an unusual time dependence, consisting of random, bidirectional jumps followed by slow relaxations. These anomalies are likely caused by instabilities in the charge distribution of the two layers.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès libre
Publication date 2003
Language Anglais
Journal information "Physical Review B, Condensed matter and materials physics" - Vol. 68, p. 201308(4) (2003)
Peer reviewed yes
Publisher The American Physical Society ((United States))
issn 1098-0121
e-issn 1550-235X
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Links
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Bibliographic reference Tutuc, E. ; Pillarisetty, R. ; Melinte, Sorin ; De Poortere, E.P. ; Shayegan, M.. Layer-charge instability in unbalanced bilayer systems in the quantum Hall regime.. In: Physical Review B, Condensed matter and materials physics, Vol. 68, p. 201308(4) (2003)
Permanent URL http://hdl.handle.net/2078.1/117201