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Self-Cascode SOI versus Graded-Channel SOI MOS Transistors for Low-Voltage Applications
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Document type | Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection |
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Publication date | 2003 |
Language | Anglais |
Conference | "European Conference on Circuit Theory and Design (ECCTD'03)", Cracow (Poland) (du 01/09/2003 au 04/09/2003) |
Peer reviewed | yes |
Host document | "Proceedings of the European Conference on Circuit Theory and Design (ECCTD'03)"- I-157 to I-160 |
Publication status | Publié |
Affiliation | UCL - FSA/ELEC - Département d'électricité |
Keywords | SOI ; SOI CMOS ; transistors ; low-voltage |
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Bibliographic reference | Sanz, Maria Teresa ; Celma, Santiago ; Calvo, Belen ; Flandre, Denis. Self-Cascode SOI versus Graded-Channel SOI MOS Transistors for Low-Voltage Applications.European Conference on Circuit Theory and Design (ECCTD'03) (Cracow (Poland), du 01/09/2003 au 04/09/2003). In: Proceedings of the European Conference on Circuit Theory and Design (ECCTD'03), 2003, p.I-157 to I-160 |
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Permanent URL | http://hdl.handle.net/2078.1/113947 |