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Displaying 9 results.
    • Journal article
    Behavior of a common source traveling wave amplifier versus temperature in SOI technology
    Si Moussa, M. Pavageau, C. Danneville, F. Russat, J. Fel, N. Raskin, Jean-Pierre[UCL] Vanhoenacker-Janvier, Danielle[UCL] (2005) European Microwave Association. Proceedings — Vol. 1, p. 288-292 (2005)
    • Journal article
    Experimental evidence of MOSFET high frequency noise reduction by channel engineering
    Emam, M. Sakalas, P. Vanhoenacker-Janvier, Danielle[UCL] Raskin, Jean-Pierre[UCL] Lim, T. Danneville, F. (2009) IEEE Transactions on Electron Devices — Vol. 56, no.7, p. 1516-1522 (2009)
    • Journal article
    An investigation of high temperature effects on CPW and MSL on SOI substrate for RF applications
    Si Moussa, M. Pavageau, C. Lederer, Dimitri[UCL] Picheta, L. Danneville, F. Raskin, Jean-Pierre[UCL] Fel, N. Russat, J. Vanhoenacker-Janvier, Danielle[UCL] (2006) Solid-State Electronics — Vol. 50, no.12, p. 1822-1827 (2006)
    • Journal article
    High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits
    Dambrine, G. Raskin, Jean-Pierre[UCL] Danneville, F. Vanhoenacker-Janvier, Danielle[UCL] Colinge, JP. Cappy, A. (1999) IEEE Transactions on Electron Devices — Vol. 46, no. 8, p. 1733-1741 (1999)
    • Journal article
    Numerical and experimental study of a 0.25 mu m fully-depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behaviour
    Rengel, R Mateos, J. Pardo, D Gonzalez, T. Martin, MJ Dambrine, G. Danneville, F. Raskin, Jean-Pierre[UCL] (2002) Semiconductor Science and Technology — Vol. 17, no. 11, p. 1149-1156 (2002)
    • Journal article
    What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?
    Dambrine, G. Raynaud, C. Lederer, Dimitri[UCL] Dehan, Morin[UCL] Rozeaux, O Vanmackelberg, M Danneville, F. Lepilliet, S Raskin, Jean-Pierre[UCL] (2003) IEEE Electron Device Letters — Vol. 24, no. 3, p. 189-191 (2003)
    • Journal article
    Noise modeling in fully depleted SOI MOSFETs
    Pailloncy, G. Iniguez, B. Dambrine, G. Raskin, Jean-Pierre[UCL] Danneville, F. (2004) Solid-State Electronics — Vol. 48, no. 5, p. 813-825 (2004)
    • Journal article
    Impact of downscaling on high-frequency noise performance of bulk and SOI MOSFETs
    Pailloncy, G. Raynaud, C. Vanmackelberg, M Danneville, F. Lepilliet, S Raskin, Jean-Pierre[UCL] Dambrine, G. (2004) IEEE Transactions on Electron Devices — Vol. 51, no. 10, p. 1605-1612 (2004)
    • Journal article
    A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs
    Rengel, R Martin, MJ Gonzalez, T. Mateos, J. Pardo, D Dambrine, G. Raskin, Jean-Pierre[UCL] Danneville, F. (2006) IEEE Transactions on Electron Devices — Vol. 53, no. 3, p. 523-532 (2006)