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All Publications

Displaying 11 results.
    • Journal article
    Evidence of Different Conduction Mechanisms in Accumulation-mode P-channel Soi Mosfets At Room and Liquid-helium Temperatures
    Rotondaro, ALP. Flandre, Denis[UCL] Magnusson, UK. Claeys, C. Terao, A. Colinge, Jean-Pierre[UCL] (1993) IEEE Transactions on Electron Devices — Vol. 40, no. 4, p. 727-732 (1993)
    • Journal article
    Measurement of Threshold Voltages of Thin-film Accumulation-mode Pmos Soi Transistors
    Terao, A.[UCL] Flandre, Denis[UCL] Loratamayo, E.[UCL] Vandewiele, F.[UCL] (1991) IEEE Electron Device Letters — Vol. 12, no. 12, p. 682-684 (1991)
    • Speech
    Analytical model for selective laser annealing of SOI
    Terao, A.[UCL] Paelinck, P. Flandre, Denis[UCL] Verlinden, P.[UCL] Van de Wiele, Fernand[UCL] (1988) 1st European SOI Workshop — Meylan (France)
    • Speech
    An Analytical Model for Gaa Transistors
    Terao, A. Vandewiele, F. (1991) 21ST EUROPEAN SOLID STATE DEVICE RESEARCH CONF ( ESSDERC 91 ) — MONTREUX(Switzerland)
    • Journal article
    Purposes of three-dimensional circuits
    Terao, A. Van de Wiele, F. (1987) IEEE Circuits and Devices Magazine — Vol. 3, no. 6, p. 31-33 (1987)
    • Speech
    Self-planarization: a new concept for 3-D and high density integrated circuits
    Terao, A. Paelinck, P. Flandre, Denis[UCL] Verlinden, P. Van de Wiele, Fernand[UCL] (1988) FED 3D Workshop 1988 — Miyagi-Zao (Japan)
    • Speech
    An analytical model for GAA resistors
    Terao, A. Van de Wiele, F. (1991) ESSDERC '91: 21st European Solid State Device Research Conference — Montreux, Switzerland
    • Journal article
    Purposes of 3-dimensional Circuits
    Terao, A. Vandewiele, F. (1987) IEEE Circuits and Devices Magazine — Vol. 3, no. 6, p. 31-33 (1987)
    • Journal article
    Effects of Total-dose Irradiation On Gate-all-around (gaa) Devices
    Colinge, JP. Terao, A. (1993) IEEE Transactions on Nuclear Science — Vol. 40, no. 2, p. 78-82 (1993)
    • Journal article
    Demonstration of the Potential of Accumulation-mode Mos-transistors On Soi Substrates for High-temperature Operation (150-300-degrees-c)
    Flandre, Denis[UCL] Terao, A.[UCL] Francis, P.[UCL] Gentinne, B.[UCL] Colinge, JP.[UCL] (1993) IEEE Electron Device Letters — Vol. 14, no. 1, p. 10-12 (1993)
    • Journal article
    Extended Theoretical-analysis of the Steady-state Linear Behavior of Accumulation-mode, Long-channel P-mosfets On Soi Substrates
    Flandre, Denis[UCL] Terao, A. (1992) Solid-State Electronics — Vol. 35, no. 8, p. 1085-1092 (1992)