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Noise properties of Low-Power Si MOSFETs through different channel engineering
Primary tabs
| Document type | Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection |
|---|---|
| Publication date | 2009 |
| Language | Anglais |
| Conference | "International Microwave Symposium 2009, Workshop WSL (IMS/RFIC) - State-of-the-Art of Low-Noise III-V Narrow-Bandgap and Silicon FET Technologies for Low-Power Applications", Boston, USA (du 07/06/2009 au 12/06/2009) |
| Peer reviewed | yes |
| Host document | "Proceedings of the International Microwave Symposium 2009, Workshop WSL (IMS/RFIC) - State-of-the-Art of Low-Noise III-V Narrow-Bandgap and Silicon FET Technologies for Low-Power Applications"- p. Paper 5 |
| Publication status | Publié |
| Affiliations |
.
- . UCL - FSA/ELEC - Département d'électricité |
| Links |
| Bibliographic reference | Danneville, François ; Lim, T.C. ; Emam, Mostafa ; Sakalas, P. ; Dambrine, Gilles ; et. al. Noise properties of Low-Power Si MOSFETs through different channel engineering.International Microwave Symposium 2009, Workshop WSL (IMS/RFIC) - State-of-the-Art of Low-Noise III-V Narrow-Bandgap and Silicon FET Technologies for Low-Power Applications (Boston, USA, du 07/06/2009 au 12/06/2009). In: Proceedings of the International Microwave Symposium 2009, Workshop WSL (IMS/RFIC) - State-of-the-Art of Low-Noise III-V Narrow-Bandgap and Silicon FET Technologies for Low-Power Applications, 2009, p. Paper 5 |
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| Permanent URL | http://hdl.handle.net/2078.1/91582 |