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Noise properties of Low-Power Si MOSFETs through different channel engineering

Bibliographic reference Danneville, François ; Lim, T.C. ; Emam, Mostafa ; Sakalas, P. ; Dambrine, Gilles ; et. al. Noise properties of Low-Power Si MOSFETs through different channel engineering.International Microwave Symposium 2009, Workshop WSL (IMS/RFIC) - State-of-the-Art of Low-Noise III-V Narrow-Bandgap and Silicon FET Technologies for Low-Power Applications (Boston, USA, du 07/06/2009 au 12/06/2009). In: Proceedings of the International Microwave Symposium 2009, Workshop WSL (IMS/RFIC) - State-of-the-Art of Low-Noise III-V Narrow-Bandgap and Silicon FET Technologies for Low-Power Applications, 2009, p. Paper 5
Permanent URL http://hdl.handle.net/2078.1/91582