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On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

Bibliographic reference Rudenko, Tamara ; Kilchytska, Valeriya ; Arshad, M.K.M. ; Raskin, Jean-Pierre ; Nazarov, A. ; et. al. On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility. In: IEEE Transactions on Electron Devices, no. 99, p. 1-8 (14 octobre 2011)
Permanent URL http://hdl.handle.net/2078.1/91507