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Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX

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Authors :
Document type : Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Abstract :

In this paper, we analyze the effects of the front and back interfaces on the transport properties in undoped ultra-thin body (UTB) SOI MOSFETs with standard and ultra-thin buried oxides (BOX), using measurements of the transconductance, gate-to-channel capacitance and carrier mobility at various back gate biases.
Publication date : 2009
Language : Anglais
Conference : "EUROSOI Conference 2009", Göteborg (Sweden) (du 19/01/2009 au 21/01/2009)
Peer reviewed : yes
Host document : "Proceedings of the EUROSOI Conference 2009"
Affiliations : Lashkaryov Institute of Semiconductor Physics (ISP), Kyiv
UCL - FSA/ELEC - Département d'électricité
CEA-LETI, MINATEC Campus
Ukraine National Academy of Science - Institute of Semiconductor Physics
Keywords : SOI MOSFETs
Links :
Bibliographic reference Rudenko, Tamara ; Kilchytska, Valeriya ; Burignat, Stéphane ; Raskin, Jean-Pierre ; Andrieu, F. ; et. al. Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX.EUROSOI Conference 2009 (Göteborg (Sweden), du 19/01/2009 au 21/01/2009). In: Proceedings of the EUROSOI Conference 2009, 2009
Permanent URL http://hdl.handle.net/2078.1/90333