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Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation

Bibliographic reference Alvarado Pulido, José Joaquin ; Iniguez, Benjamin ; Estrada, Magali ; Flandre, Denis ; Cerdeira, Antonio. Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation. In: International Journal of Numerical Modelling: Electronic Netwoks, Devices and Fields, Vol. 23, p. 88-106 (2009)
Permanent URL http://hdl.handle.net/2078.1/88405
  1. Colinge Jean-Pierre, Silicon-on-Insulator Technology: Materials to VLSI, ISBN:9781461347958, 10.1007/978-1-4419-9106-5
  2. Colinge, Solid-State Electronics, 48, 897 (2004)
  3. Li, IEEE Transactions on Nanotechnology, 4, 645 (2005)
  4. Poiroux, Advanced CMOS Devices on Bulk and SOI: Physics, Modeling and Characterization, 55 (2009)
  5. Tsormpatzoglou, Physica Status Solidi (c), 5, 3605 (2008)
  6. Borli, Solid-State Electronics, 52, 1489 (2008)
  7. Moldovan, Solid-State Electronics, 51, 655 (2007)
  8. Cerdeira, Solid-State Electronics, 52, 830 (2008)
  9. Cerdeira, Solid-State Electronics, 52, 1064 (2008)
  10. Device simulator ATLAS, Silvaco International, 2007.
  11. Ge, IEEE Transactions on Electron Devices, 49, 287 (2002)
  12. Coram GJ. How to (and how not to) write a compact model in Verilog-A. Proceedings of 2004 IEEE International Behavioral Modeling and Simulation Conference (BMAS), San José, California, 2004.
  13. Corless, Advances in Computational Mathematics, 5, 329 (1996)