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Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise

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Simoen, E. [IMEC] Put, S. [IMEC] Claeys, C. [IMEC] Kilchytska, Valeriya [UCL] Alvarado Pulido, José Joaquin [UCL] Flandre, Denis [UCL]

A comparison study is made on the high-energy neutron irradiation response of MuGFETs fabricated on Silicon-on-Insulator (SOI) and strained SOI (sSOI) substrates. Both DC and low-frequency noise characteristics have been obtained in linear operation. It is shown that while a pronounced device-to-device variation can be noted, there is no clear impact of the strain on the radiation behavior.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2010
Language Anglais
Journal information "ECS Transactions" - Vol. 31, no. 1, p. 43-50 (2010)
Peer reviewed yes
issn 1938-5862
Publication status Publié
Affiliations IMEC
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords MuGFETs ; SOI ; Silicon-on-insulator
Links
Bibliographic reference Simoen, E. ; Put, S. ; Claeys, C. ; Kilchytska, Valeriya ; Alvarado Pulido, José Joaquin ; et. al. Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise. In: ECS Transactions, Vol. 31, no. 1, p. 43-50 (2010)
Permanent URL http://hdl.handle.net/2078.1/88050