André, Nicolas
[UCL]
Rue, Bertrand
[UCL]
Van Vynckt, D.
[UCL]
Francis, Laurent
[UCL]
Flandre, Denis
[UCL]
Raskin, Jean-Pierre
[UCL]
Silicon-on-Insulator (SOI) technology, with unique properties such as harsh environment resistance and lower power consumption 1, is presented here as a platform for CMOS and MEMS co-integration. An original CMOS-compatible process has been developed for the design and the co-fabrication of out-of-plane (3D) movable cantilevers and ring oscillators (RO) circuits on the same chip. The measured transducer, by deflection of the out-of-plane MEMS component, shows until 10% variation of the frequency under different flow rates.
Bibliographic reference |
André, Nicolas ; Rue, Bertrand ; Van Vynckt, D. ; Francis, Laurent ; Flandre, Denis ; et. al. Ultra Low Power flow-to-frequency SOI MEMS transducer. In: Procedia Engineering, Vol. 5, p. 540-543 (2010) |
Permanent URL |
http://hdl.handle.net/2078.1/87125 |