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Comparison between the behavior of submicron Graded-Channel SOI nMOSFETs with Fully- and Partially-Depleted operations in a wide temperature range

Bibliographic reference de Souza, M. ; Emam, Mostafa ; Vanhoenacker-Janvier, Danielle ; Raskin, Jean-Pierre ; Flandre, Denis ; et. al. Comparison between the behavior of submicron Graded-Channel SOI nMOSFETs with Fully- and Partially-Depleted operations in a wide temperature range.2010 IEEE International SOI Conference (San Diego, CA, USA, du 11/10/2010 au 14/10/2010). In: Proceedings of the 2010 IEEE International SOI Conference, 2010, p.82-83
Permanent URL http://hdl.handle.net/2078.1/86876