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Boosting ION/IOFF Ratio in Ultimate Sub-Decananometer Transistors: The Case of FDSOI Multi-gate MOSFETs and Multi-barrier Enhanced Gate Modulated Resonant Tunneling-FETs

Bibliographic reference Afzalian, Aryan. Boosting ION/IOFF Ratio in Ultimate Sub-Decananometer Transistors: The Case of FDSOI Multi-gate MOSFETs and Multi-barrier Enhanced Gate Modulated Resonant Tunneling-FETs.SBMICRO 2011 (Joao Pessoa (Brésil), du 30/08/2011 au 02/09/2011). In: ECS Trans. (SBMICRO 2011), Vol. 39In: Proceedings of the 2011 SBMICRO conference, 2011, p.295-300
Permanent URL http://hdl.handle.net/2078.1/86751