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Transport-Confined Multi-Barrier FETs: A New Paradigm for Low-Leakage High On-Current Transistors

Bibliographic reference Afzalian, Aryan ; Flandre, Denis. Transport-Confined Multi-Barrier FETs: A New Paradigm for Low-Leakage High On-Current Transistors.219th ECS Meeting (Montreal/QC/Canada, du 01/05/2011 au 06/05/2011). In: Trans. of 219th ECS Symp.:Advanced Semiconductor-on-Insulator Technology and Related Physics 15, Vol. 35, no. 5, p. 295-300 (2011)In: Proceedings of the 219th ECS Meeting, The Electrochemical Society2011
Permanent URL http://hdl.handle.net/2078.1/86743