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High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs

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Kilchytska, Valeriya [UCL] Alvarado, Jose Joaquin [UCL] Put, S. [IMEC] Collaert, N. [IMEC] Simoen, E. [IMEC] Militaru, Otilia [UCL] Berger, Guy [UCL] Flandre, Denis [UCL]

A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar and multiple-gate (MuG) silicon-on-insulator (SOI) devices are considered. Device response to the neutron irradiation is assessed through the variations of threshold voltage and transconductance maximum. The difference between strained and non-strained device response to the high-energy neutrons exposure is clearly evidenced. The reasons for such a difference are discussed. Analysis of the experimental results allows for suggesting that strain relaxation is one of the probable causes.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2012
Language Anglais
Journal information "Microelectronics Reliability" - Vol. 52, no. 1, p. 118-123 (2012)
Peer reviewed yes
Publisher Pergamon ((United Kingdom) Kidlington)
issn 0026-2714
e-issn 1872-941X
Publication status Publié
Affiliations UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
IMEC
UCL - SST/CRC - Centre de ressources du cyclotron
Keywords SOI ; MOSFETs ; MuGFETs
Links
Bibliographic reference Kilchytska, Valeriya ; Alvarado, Jose Joaquin ; Put, S. ; Collaert, N. ; Simoen, E. ; et. al. High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. In: Microelectronics Reliability, Vol. 52, no. 1, p. 118-123 (2012)
Permanent URL http://hdl.handle.net/2078.1/86608