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Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs

Bibliographic reference Afzalian, Aryan ; Flandre, Denis. Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs. In: Solid-State Electronics, Vol. 65-66, no. 1, p. 123-129 (November-December 2011)
Permanent URL http://hdl.handle.net/2078.1/86605