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Contribution of carrier tunneling and gate induced drain leakage effects to the gate and drain currents of fin-shaped field-effect transistors

Bibliographic reference Garduno, S.I. ; Cerdeira, A. ; Estrada, M. ; Alvarado, Jose Joaquin ; Kilchytska, Valeriya ; et. al. Contribution of carrier tunneling and gate induced drain leakage effects to the gate and drain currents of fin-shaped field-effect transistors. In: Journal of Applied Physics, Vol. 109, no. 8 (15 avril 2011)
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