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Contribution of carrier tunneling and gate induced drain leakage effects to the gate and drain currents of fin-shaped field-effect transistors
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Document type | Article de périodique (Journal article) – Article de recherche |
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Publication date | 2011 |
Language | Anglais |
Journal information | "Journal of Applied Physics" - Vol. 109, no. 8 (15 avril 2011) |
Peer reviewed | yes |
Publisher | American Institute of Physics ((United States) New York, N.Y.) |
issn | 0021-8979 |
Publication status | Publié |
Affiliations |
CINVESTAV
- Department of Electrical Engineering UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
Keywords | Leakage currents ; MOSFET ; Semiconductor device models ; Tunnelling |
Links |
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Bibliographic reference | Garduno, S.I. ; Cerdeira, A. ; Estrada, M. ; Alvarado, Jose Joaquin ; Kilchytska, Valeriya ; et. al. Contribution of carrier tunneling and gate induced drain leakage effects to the gate and drain currents of fin-shaped field-effect transistors. In: Journal of Applied Physics, Vol. 109, no. 8 (15 avril 2011) |
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Permanent URL | http://hdl.handle.net/2078.1/86363 |