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Effect of gate oxide scaling on RF performance of SOI MOSFETs

Bibliographic reference Emam, Mostafa ; Vanhoenacker-Janvier, Danielle ; Raskin, Jean-Pierre. Effect of gate oxide scaling on RF performance of SOI MOSFETs.11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF'11 (Phoenix, Arizona, USA, du 17/01/2011 au 19/01/2011). In: Proceedings of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF'11, 2011
Permanent URL http://hdl.handle.net/2078.1/86309