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DC and AC analysys of novel SOI MOSFET devices using 2-D and 3-D numerical simulations

Bibliographic reference Chung, Tsung Ming ; Raskin, Jean-Pierre. DC and AC analysys of novel SOI MOSFET devices using 2-D and 3-D numerical simulations. In: International Journal of Nanoscience, Vol. 5, no. 4-5, p. 639-644 (May)
Permanent URL http://hdl.handle.net/2078.1/85683
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