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Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap

Bibliographic reference Reckinger, Nicolas ; Tang, Xiaohui ; Bayot, Vincent ; Yarekha, Dmitri A. ; Dubois, E. ; et. al. Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap. In: Journal of Applied Physics, Vol. 104, no. 10, p. 103523 (2008)
Permanent URL http://hdl.handle.net/2078.1/85667
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