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Analysis of Bandwidth and Nonlinear Effects in InAlAs/InGaAs/InP Based Ballistic Nanodevices for Applications up to THz Range

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Rashmi [] Bednarz, Lukasz [UCL] Gence, Loïk [UCL] Hackens, Benoît [UCL] Boutry, Hervé [UCL] Bayot, Vincent [UCL] Huynen, Isabelle [UCL]

Analysis of nonlinear effects in InAlAs/InGaAs-based channels and three-terminal ballistic junctions (TBJs) is performed for applications up to THz range. Results show that InGaAs-based channels designed for ballistic operation exhibit high intrinsic cut-off frequency (fT ~ 10 THz). Nonlinear effects in TBJs, which result from device geometry and space charge distribution, show good qualitative agreement with published results.

Document type Article de périodique (Journal article)
Publication date 2005
Language Anglais
Journal information "International Journal of Nanoscience" - Vol. 4, no. 5-6, p. 1033-1038 (2005)
Peer reviewed yes
issn 0219-581X
e-issn 1793-5350
Publication status Publié
Affiliations UCL - FSA/ELEC - Département d'électricité
UCL - UCL/UCL - Secteur UCL
Keywords Ballistic ; TBJ ; YBJ ; Nanodevice ; Nonlinear
Links
  1. Song Aimin M., Omling Pär, Samuelson Lars, Seifert Werner, Shorubalko Ivan, Zirath Herbert, Operation of InGaAs/InP-Based Ballistic Rectifiers at Room Temperature and Frequencies up to 50 GHz, 10.1143/jjap.40.l909
  2. Shorubalko I., Xu H. Q., Maximov I., Omling P., Samuelson L., Seifert W., Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions, 10.1063/1.1396626
  3. Xu H. Q., Electrical properties of three-terminal ballistic junctions, 10.1063/1.1360229
  4. Xu H.Q, A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics, 10.1016/s1386-9477(02)00240-0
  5. Worschech L, Schliemann A, Reitzenstein S, Hartmann P, Forchel A, Microwave rectification in ballistic nanojunctions at room temperature, 10.1016/s0167-9317(02)00604-4
  6. Mateos J., Gonzalez T., Pardo D., Hoel V., Cappy A., Monte Carlo simulator for the design optimization of low-noise HEMTs, 10.1109/16.870579
  7. Datta Supriyo, Electronic Transport in Mesoscopic Systems, ISBN:9780511805776, 10.1017/cbo9780511805776
Bibliographic reference Rashmi ; Bednarz, Lukasz ; Gence, Loïk ; Hackens, Benoît ; Boutry, Hervé ; et. al. Analysis of Bandwidth and Nonlinear Effects in InAlAs/InGaAs/InP Based Ballistic Nanodevices for Applications up to THz Range. In: International Journal of Nanoscience, Vol. 4, no. 5-6, p. 1033-1038 (2005)
Permanent URL http://hdl.handle.net/2078.1/83540