User menu

Plasticity of electromigration-induced hillocking and its effect on the critical length

Bibliographic reference Proost, Joris ; D'Haen, J. ; Maex, K. ; Delaey, L.. Plasticity of electromigration-induced hillocking and its effect on the critical length. In: Journal of Applied Physics, Vol. 91, no. 11, p. 9108-9115 (2002)
Permanent URL
  1. Blech I. A., Erratum: Electromigration in thin aluminum films on titanium nitride, 10.1063/1.324308
  2. Blech I.A., Kinsbron E., Electromigration in thin gold films on molybdenum surfaces, 10.1016/0040-6090(75)90052-8
  3. Blech I.A., Diffusional back flows during electromigration, 10.1016/s1359-6454(97)00446-1
  4. Blech I. A., Tai K. L., Measurement of stress gradients generated by electromigration, 10.1063/1.89414
  5. Ross C. A., Drewery J. S., Somekh R. E., Evetts J. E., The effect of anodization on the electromigration drift velocity in aluminum films, 10.1063/1.344266
  6. Chizhik S. A., Matvienko A. A., Sidelnikov A. A., Proost J., Modeling electromigration-induced stress evolution and drift kinetics with a stress-dependent diffusivity, 10.1063/1.1287760
  7. Doerner M.F., Gardner D.S., Nix W.D., Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques. , 10.1557/jmr.1986.0845
  8. Glickman E., Osipov N., Ivanov A., Nathan M., Diffusional creep as a stress relaxation mechanism in electromigration, 10.1063/1.366729
  9. Chaudhari P., Hillock growth in thin films, 10.1063/1.1663054
  10. Klinger L., Glickman E., Katsman A., Levin L., Time dependence of stress and hillock distributions during electromigration in thin metal film interconnections, 10.1016/0921-5107(94)90271-2
  11. Glickman E., Nathan M., Creep-controlled electromigration in near-threshold interconnects, 10.1016/s0167-9317(99)00299-3
  12. Proost J., Samajdar I., Verlinden B., Van Houtte P., Maex K., Delaey L., The role of grain boundary structure on electromigration-induced drift in pure Al and Al(0.5wt% Cu), 10.1016/s1359-6462(98)00306-6
  13. Proost J., Chemical and Electrical Characterization of the Interaction of BCl[sub 3]/Cl[sub 2] Etching and CF[sub 4]/H[sub 2]O Stripping Plasmas with Aluminum Surfaces, 10.1149/1.1392619
  14. Schreiber H.-U., Electromigration mechanisms in aluminum lines, 10.1016/0038-1101(85)90196-0
  15. Peterson N. L., Rothman S. J., Impurity Diffusion in Aluminum, 10.1103/physrevb.1.3264
  16. Proost Joris, Maex Karen, Delaey Luc, Electromigration threshold in damascene versus plasma-etched interconnects, 10.1063/1.122578
  17. Yavari Parviz, Miller David A, Langdon Terence G, An investigation of harper-dorn creep—I. Mechanical and microstructural characteristics, 10.1016/0001-6160(82)90085-2
  18. Arzt E., Ashby M.F., Verrall R.A., Interface controlled diffusional creep, 10.1016/0001-6160(83)90015-9
  19. Wang P.-C., Cargill G. S., Noyan I. C., Hu C.-K., Electromigration-induced stress in aluminum conductor lines measured by x-ray microdiffraction, 10.1063/1.120604
  20. Volin T. E., Balluffi R. W., Annealing kinetics of voids and the Self-diffusion coefficient in aluminum, 10.1002/pssb.19680250116
  21. Coble R. L., A Model for Boundary Diffusion Controlled Creep in Polycrystalline Materials, 10.1063/1.1702656
  22. Thouless M.D., Effect of surface diffusion on the creep of thin films and sintered arrays of particles, 10.1016/0956-7151(93)90155-l
  23. Proost Joris, Maex Karen, Delacy Luc, Electromigration-induced drift in damascene and plasma-etched Al(Cu). II. Mass transport mechanisms in bamboo interconnects, 10.1063/1.372389