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Accurate prediction of the volume inversion impact on undoped Double Gate MOSFET capacitances

Bibliographic reference Moldovan, O. ; Chaves, F.A. ; Jime nez, D. ; Raskin, Jean-Pierre ; Iniguez, B.. Accurate prediction of the volume inversion impact on undoped Double Gate MOSFET capacitances. In: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 23, no. 6, p. 447-457 (2010)
Permanent URL http://hdl.handle.net/2078.1/68555
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