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[Models for implanted MOS transistors]

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Van de Wiele, F. Demoulin, E. Sinon, R. Gilles, C.

The effects of implantation on threshold voltage for a p-type substrate are reviewed. The I-V characteristics of an n-channel device are considered for a rectangular impurity profile and the model shown to agree with practical measurements.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 1977
Conference "Modelling Semiconductor Devices", Lausanne, Switzerland (18-20 October 1977)
Peer reviewed yes
Host document "Modelling Semiconductor Devices"- p. 325-338
Publisher Ecole polytechnique federale de lausanne
Affiliation UCL
Links
Bibliographic reference Van de Wiele, F. ; Demoulin, E. ; Sinon, R. ; Gilles, C.. [Models for implanted MOS transistors].Modelling Semiconductor Devices (Lausanne, Switzerland, 18-20 October 1977). In: Modelling Semiconductor Devices, Ecole polytechnique federale de lausanne1977, p. 325-338
Permanent URL http://hdl.handle.net/2078.1/68500