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Intrinsic gate capacitances of SOI MOSFETs: measurement, modelling, floating substrate effects

Bibliographic reference Flandre, Denis ; Van de Wiele, Fernand ; Jespers, P.G.A. ; Haond, M.. Intrinsic gate capacitances of SOI MOSFETs: measurement, modelling, floating substrate effects.20th European Solid State Device Research Conference (ESSDERC 1990) (Nottingham (UK), du 10/09/1990 au 13/09/1990). In: Eccleston, W.; Rosser, P.J.;, ESSDERC 90. 20th European Solid State Device Research Conference, Adam hilger1990, p.437-440
Permanent URL http://hdl.handle.net/2078.1/68315